Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor laser | |
其他题名 | Manufacture of semiconductor laser |
SHAKUDA YUKIO; TANAKA HARUO; MUSHIGAMI MASAHITO; KUSUNOKI KAORU; IGAWA KATSUHIKO; ISHIDA YUJI | |
1988-09-16 | |
专利权人 | ROHM CO LTD |
公开日期 | 1988-09-16 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To reduce a gap between a current blocking region and an active layer, by forming the current blocking region by ion implantation of impurities or the like at an intermediate stage before forming an upper clad layer and a cap layer having fixed thicknesses. CONSTITUTION:An n-type AlGaAs lower part clad layer 2, an AlGaAs active layer 3, an upper first clad layer 4 of a p-type AlGaAs and a GaAs protective layer 5 are by turns epitaxially grown on an n-type GaAs substrate Next, a stripe part 4a is formed in the depth not reaching the lower clad layer 2 from the surface by ion implantation or diffusion. In this way, an n-type current blocking region 4b and a stripe part 4a are formed on the upper first clad layer 4. In this constitution, thickness of the stripe part 4a can be formed with high dimension accuracy so as to reduce a gap (t) between the active layer 3 and the current blocking layer 4b. |
其他摘要 | 用途:为了减小电流阻挡区域和有源层之间的间隙,通过在形成上包层和具有固定厚度的盖层之前的中间阶段通过离子注入杂质等形成电流阻挡区域。组成:在n型GaAs衬底1上外延生长n型AlGaAs下部包层2,AlGaAs有源层3,p型AlGaAs的上部第一包层4和GaAs保护层5。接下来,通过离子注入或扩散,在从表面到达下包层2的深度处形成条形部分4a。以这种方式,在上部第一包层4上形成n型电流阻挡区4b和条形部分4a。在这种结构中,条形部分4a的厚度可以以高尺寸精度形成,以便减小间隙(t)在有源层3和电流阻挡层4b之间。 |
申请日期 | 1987-03-11 |
专利号 | JP1988222488A |
专利状态 | 失效 |
申请号 | JP1987056242 |
公开(公告)号 | JP1988222488A |
IPC 分类号 | H01L21/205 | H01L21/265 | H01S5/00 | H01S5/20 | H01S5/223 | H01S5/323 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/74269 |
专题 | 半导体激光器专利数据库 |
作者单位 | ROHM CO LTD |
推荐引用方式 GB/T 7714 | SHAKUDA YUKIO,TANAKA HARUO,MUSHIGAMI MASAHITO,et al. Manufacture of semiconductor laser. JP1988222488A[P]. 1988-09-16. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988222488A.PDF(340KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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