Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	HORIUCHI SHIGEKI; YAGI TETSUYA; OTA YOICHIRO
	1989-05-16
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1989-05-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device of high performance excellent in frequency response characteristics, by using a semiinsulative GaAs layer as a current blocking layer, blocking the current to parts except a ridge part by the effect of insulating property of the blocking layer itself, and preventing leak current. CONSTITUTION:When a bias voltage is so applied between a P-side electrode 9 and an N-side electrode 8 that the P-side electrode 9 becomes positive, current does not flow in a region where a semiinsulative GaAs current blocking layer interposes between the electrodes 9, 8, and current flows only in a ridge part 7. As the injection current is increased, stimulated emission begins and reaches laser oscillation. In the vertical direction of a device, the laser light is confined, by the effect of difference of real refractive indexes between an active layer 3 and a first and a second clad layers 2, 4. As a result, the leak current caused by the deterioration of a P-N junction is prevented. Thereby obtaining a semiconductor laser device of high performance excellent in frequency response characteristics.
其他摘要	用途：为了获得频率响应特性优异的高性能半导体激光器件，通过使用半绝缘GaAs层作为电流阻挡层，通过阻挡层本身的绝缘性能阻挡除脊部之外的部分的电流，并防止泄漏电流。组成：当在P侧电极9和N侧电极8之间施加偏压使得P侧电极9变为正时，电流不会在半绝缘GaAs电流阻挡层介于其间的区域中流动。电极9,8和电流仅在脊部7中流动。随着注入电流的增加，受激发射开始并达到激光振荡。在器件的垂直方向上，通过有源层3与第一和第二包层2,4之间的实际折射率差的影响来限制激光。结果，由此引起的漏电流防止PN结的劣化。从而获得频率响应特性优异的高性能半导体激光器件。
申请日期	1987-11-06
专利号	JP1989123492A
专利状态	失效
申请号	JP1987281431
公开（公告）号	JP1989123492A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74212
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	HORIUCHI SHIGEKI,YAGI TETSUYA,OTA YOICHIRO. Semiconductor laser device. JP1989123492A[P]. 1989-05-16.

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