Semiconductor light emitting element

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor light emitting element
其他题名	Semiconductor light emitting element
	UMEO ITSUO; AKITA KENZOU
	1982-12-06
专利权人	FUJITSU KK
公开日期	1982-12-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve light emitting efficiency by arranging a high resistance layer on both sides of a stripe shaped active layer which is a light emitting layer and in the vicinity of said active layer, and effectively flowing a current supplied from a power source to the active layer. CONSTITUTION:In an N type InP substrate 101, a groove, wherein the width corresponding to a light emitting stripe width is 2-3mum and the depth is about 2.5mum is formed by supplying a desired photolithography technology and an etching technology. Then, an N type InGaAsP layer 102 and a N type InGaAsP active layer 103 are embedded so that the thickness of the layered body becomes 0.2mum in the groove by a liquid phase epitaxial technology. On the surface of substrate which surrounds the layers 102 and 103 so that the substrate is protruded, a layer 105 having the same composition as that of the layer 102 and the layer 106 having the same composition as that of the layer 103 are grown. Thereafter, a P type InGaAsP clad layer 107 and a P InGaAsP layer 108 are grown on the entire surface so as to bury the groove. H ions are implanted through said layered body, and an N type high resistance layer 104 of about 10OMEGA.cm is formed at the surface layer part of the substrate 101 surrounding the active layer 103.
其他摘要	用途：通过在作为发光层的条形活性层的两侧和所述有源层附近设置高电阻层，并有效地将从电源提供的电流流向活性层来提高发光效率层。组成：在N型InP衬底101中，通过提供所需的光刻技术和蚀刻技术形成凹槽，其中对应于发光条纹宽度的宽度是2-3μm，深度是大约2.5μm。然后，嵌入N型InGaAsP层102和N型InGaAsP有源层103，使得通过液相外延技术在沟槽中层叠体的厚度变为0.2μm。在围绕层102和103以使基板突出的基板表面上，生长具有与层102相同组成的层105和具有与层103相同组成的层106。之后，在整个表面上生长P型InGaAsP包覆层107和P + InGaAsP层108，以掩埋凹槽。通过所述层叠体注入H +离子，并且在围绕有源层103的基板101的表面层部分形成约103Ω·cm的N型高电阻层104。
申请日期	1981-06-01
专利号	JP1982198687A
专利状态	失效
申请号	JP1981084018
公开（公告）号	JP1982198687A
IPC 分类号	H01L33/14 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01S5/227 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74166
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	UMEO ITSUO,AKITA KENZOU. Semiconductor light emitting element. JP1982198687A[P]. 1982-12-06.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1982198687A.PDF（111KB）	专利		开放获取	CC BY-NC-SA	请求全文