Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	TSUNEKAWA YOSHIFUMI
	1990-03-08
专利权人	SEIKO EPSON CORP
公开日期	1990-03-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain one having high light output characteristics, low noise characteristics and that oscillates stable basic lateral mode by having a resonator end surface section structured in a phased array, having a mode filter function in the vicinity of the center of the resonator and using a gain waveguide mechanism. CONSTITUTION:In a semiconductor laser having a rib-like light waveguide, the side of which is buried with a II-VI compound semiconductor layer 107, a plurality of rib-like light waveguides in which a current injection width and a rib-like light waveguide width are made almost equal and narrow and a refraction index waveguides structure is made, are placed at an interval that causes light connection alternately at least in the vicinity of one resonator end surface. In the vicinity of the center of the resonator, the width of the rib-like light waveguide is made wider than the width of the rib-like light waveguide having the refraction index waveguide structure and narrower than the space between both sides of the plural rib-like light waveguide having the refraction index waveguide structure present on the resonator end surface and a gain waveguide structure is made. For, example, the side surface of a rib-like light waveguide formed in a shape as shown in the shaded portion is buried with ZnSe 107.
其他摘要	目的：通过将谐振器端面部分构造成相控阵，在谐振器中心附近具有模式滤波功能，并使用具有高光输出特性，低噪声特性并振荡稳定基本横向模式的一个增益波导机制。组成：在具有肋状光波导的半导体激光器中，其侧面埋有II-VI化合物半导体层107，多个肋状光波导，其中电流注入宽度和肋状光使波导宽度几乎相等且窄并且制成折射率波导结构，以至少在一个谐振器端面附近交替地引起光连接的间隔放置。在谐振器中心附近，肋状光波导的宽度比具有折射率波导结构的肋状光波导的宽度宽，并且比多个肋的两侧之间的空间窄。具有存在于谐振器端面上的折射率波导结构的类光波导和增益波导结构。例如，形成为阴影部分所示形状的肋状光波导的侧表面用ZnSe 107掩埋。
申请日期	1988-09-02
专利号	JP1990068975A
专利状态	失效
申请号	JP1988219817
公开（公告）号	JP1990068975A
IPC 分类号	H01S5/00 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74164
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TSUNEKAWA YOSHIFUMI. Semiconductor laser. JP1990068975A[P]. 1990-03-08.

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