Semiconductor laser element

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	Semiconductor laser element
其他题名	Semiconductor laser element
	KOBAYASHI UICHIROU
	1983-05-25
专利权人	HITACHI SEISAKUSHO KK
公开日期	1983-05-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent photochemical oxidation due to the rise in temperature and thereby to prevent the deterioratin of an end surface, by a method wherein the edge part of an active layer wherefrom laser beams are emitted is made not to be oscillated. CONSTITUTION:After a substrate 1 made of n type GaAs is prepared, a groove (channel) 2 is provided by etching in the center of the main surface of the substrate This groove 2 serves as a groove determining an oscillation region which is an optical cavity (optical waveguide) of a semiconductor laser. Both ends of the groove 2 are positioned inside the end surface of the substrate 1, not reaching the same, differently from conventional ones. As the result, a reflector surface whereat lasing is conducted is formed on the end surface of the groove 2 located inside the end surface of an element, an active layer 4 located between the reflector surface and the end surface is not oscillated, and thus the rise in temperature due to the concentration of current is suppressed. Accordingly, the deterioration of the end surface is hard to occur, and the stability of the quality of the element, i.e. the reliability thereof, as well as the yield, can be improved.
其他摘要	用途：为了防止由于温度升高引起的光化学氧化，从而防止端面的劣化，通过其中发射激光束的有源层的边缘部分不振荡的方法。组成：在制备由n型GaAs制成的基板1之后，通过在基板1的主表面的中心蚀刻来提供凹槽（通道）2。该凹槽2用作确定振荡区域的凹槽，该凹槽是半导体激光器的光学腔（光波导）。凹槽2的两端位于基板1的端面内侧，与传统的不同。结果，在位于元件端面内侧的凹槽2的端面上形成进行激光照射的反射器表面，位于反射器表面和端面之间的有源层4不振荡，因此由于电流集中而导致的温度升高受到抑制。因此，难以发生端面的劣化，并且可以提高元件质量的稳定性，即其可靠性以及产量。
申请日期	1981-11-20
专利号	JP1983087888A
专利状态	失效
申请号	JP1981185356
公开（公告）号	JP1983087888A
IPC 分类号	H01S5/00 \| H01S5/10 \| H01S5/16 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/73949
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KOBAYASHI UICHIROU. Semiconductor laser element. JP1983087888A[P]. 1983-05-25.

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