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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
	KOBAYASHI TETSUO
	1990-02-08
专利权人	OOSAKA DAIGAKUCHO
公开日期	1990-02-08
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To obtain a coherent photo output by a method wherein optical properties of a semiconductor are made to have a structure of a three dimensional period by being varied with a period of approximately wavelengths. CONSTITUTION:The optical properties of a semiconductor are varied periodically in the directions (x), (y), (z) with the period of approximately wavelengths and thus made to have the structure of the three dimensional period by varying the ratio of composition of the semiconductor, the concentration of a doped impurity, etc. Further, the element is formed in a double hetero junction structure by being divided into a P type region 1, a main active region 2, and an an type region 3 in the direction of the y-axis. A current is injected into this light emitting element having the structural part 4 of the three dimensional period through electrodes 6 and 6', and accordingly the element is operated as a light emitting diode at a current less than that of an oscillation threshold value. This spontaneously emitted light has the discrete proper mode of the light wave whereby the semiconductor body has the structure of the three dimensional period, and is so restricted as to have a small number of modes in a gain band.
其他摘要	目的：通过一种方法获得相干光输出，其中半导体的光学性质通过以近似波长的周期变化而具有三维周期的结构。组成：半导体的光学性质在方向（x），（y），（z）周期性地周期性变化，具有近似波长的周期，因此通过改变组成的比例使其具有三维周期的结构。半导体，掺杂杂质的浓度等。此外，通过在方向上划分为P型区域1，主有源区域2和类型区域3，该元件形成为双异质结结构。 y轴。通过电极6和6'将电流注入到具有三维周期的结构部分4的发光元件中，因此该元件在小于振荡阈值的电流下作为发光二极管工作。这种自发发射的光具有光波的离散适当模式，由此半导体本体具有三维周期的结构，并且被限制为在增益带中具有少量模式。
申请日期	1982-09-14
专利号	JP1990006238B2
专利状态	失效
申请号	JP1982160556
公开（公告）号	JP1990006238B2
IPC 分类号	H01S5/00 \| G02F3/02
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/73798
专题	半导体激光器专利数据库
作者单位	OOSAKA DAIGAKUCHO
推荐引用方式 GB/T 7714	KOBAYASHI TETSUO. -. JP1990006238B2[P]. 1990-02-08.

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JP1990006238B2.PDF（235KB）	专利		开放获取	CC BY-NC-SA	请求全文