Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	TABUCHI HARUHIKO
	1992-09-24
专利权人	FUJITSU LTD
公开日期	1992-09-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable the oscillation light rays of a semiconductor light emitting device to be lessened in spectral line width by a method wherein an active layer is of a quantum well structure, and a wavelength selection means selects wavelengths correspondent to the second quantum level energy of the quantum well. CONSTITUTION:A prescribed bias is applied to a P-side electrode 15 and an N-side electrode 16, and a current is injected into a QW active layer 13 to oscillate laser rays. At this point, electrons distributed at a first quantum level energy E1 are recombined with holes to emit light rays, and when a current exceeds a threshold current Ith, laser rays start to oscillate. In succession, an AR coat 17 is provided to the end face to prevent reflection, and when an injection current I is made to increase, carriers start to assemble at a second quantum level energy E2. When carriers distributed at an energy E2 start to recombine, a differential gain becomes large and a refractive index change attendant on that of carrier density becomes small. Therefore, in this state, an alpha parameter becomes small at a second quantum level energy E2.
其他摘要	目的：通过有源层具有量子阱结构的方法，使半导体发光器件的振荡光线的光谱线宽减小，并且波长选择装置选择对应于第二量子能级的波长。量子阱。组成：规定的偏压施加到P侧电极15和N侧电极16，并且电流注入QW有源层13以振荡激光。此时，以第一量子能级E1分布的电子与空穴重新组合以发射光线，并且当电流超过阈值电流Ith时，激光射线开始振荡。接着，在端面上设置AR涂层17以防止反射，并且当使注入电流I增加时，载流子开始以第二量子能级E2组装。当以能量E2分布的载流子开始重新组合时，差分增益变大并且伴随载流子密度的折射率变化变小。因此，在该状态下，α参数在第二量子能级E2处变小。
申请日期	1991-02-25
专利号	JP1992268780A
专利状态	失效
申请号	JP1991029850
公开（公告）号	JP1992268780A
IPC 分类号	H01S5/00 \| H01S5/06 \| H01S5/34 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/73767
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	TABUCHI HARUHIKO. Semiconductor light emitting device. JP1992268780A[P]. 1992-09-24.

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