Method for fabricating semiconductor device

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	Method for fabricating semiconductor device
其他题名	Method for fabricating semiconductor device
	UEDA, TETSUZO; ISHIDA, MASAHIRO; YURI, MASAAKI
	2005-05-03
专利权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
公开日期	2005-05-03
授权国家	美国
专利类型	授权发明
摘要	A polymer film including an adhesive layer, which can be peeled off with heat, is bonded to the upper surface of a semiconductor layer. Then, a KrF excimer laser light beam is applied to a surface of a substrate opposite to the semiconductor layer. This causes local heating at the laser spot, so that the bonding of atoms is cut off at the interface between the semiconductor layer and the substrate, thereby forming a thermal decomposition layer between the substrate and the semiconductor layer. Subsequently, the substrate is heated at a given temperature, so that the adhesive layer foams to lose its adhesive power. As a result, the polymer film is easily peeled off from the semiconductor layer.
其他摘要	可以通过加热剥离的包括粘合剂层的聚合物膜粘合到半导体层的上表面。然后，将KrF准分子激光束施加到与半导体层相对的基板表面上。这导致激光点处的局部加热，从而在半导体层和基板之间的界面处切断原子的键合，从而在基板和半导体层之间形成热分解层。随后，在给定温度下加热基板，使得粘合剂层发泡以失去其粘合力。结果，聚合物膜容易从半导体层上剥离。
申请日期	2003-05-21
专利号	US6887770
专利状态	失效
申请号	US10/442301
公开（公告）号	US6887770
IPC 分类号	H01L21/762 \| H01L21/70 \| H01S5/323 \| H01L33/00 \| H01S5/02 \| H01S5/00 \| H01L21/02 \| H01L21/20 \| H01L21/205 \| H01L33/06 \| H01L33/32 \| H01L33/40 \| H01S3/00 \| H01S5/343 \| H01L21/30 \| H01L21/46
专利代理人	-
代理机构	MCDERMOTT WILL & EMERY LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/71644
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	UEDA, TETSUZO,ISHIDA, MASAHIRO,YURI, MASAAKI. Method for fabricating semiconductor device. US6887770[P]. 2005-05-03.

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