Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
KITAJIMA SHIGEKI; KAYANE NAOKI; SASAKI SHINYA; TSUSHIMA HIDEAKI | |
1991-03-01 | |
专利权人 | HITACHI LTD |
公开日期 | 1991-03-01 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To realize a high-speed control of light frequency using semiconductor module by means of a simple control circuit by putting a semiconductor laser side by side with a heating element for making the sum of a calorific values from said semiconductor laser and said heating element constant. CONSTITUTION:Light output 101 from a semiconductor laser 1 for light emission is under the control of an injection current control circuit 10, a calorific value stabilization circuit 20 and a temperature stabilization circuit 40. The calorific value stabilization circuit 20 controls an injection current 200 so that the sum of an injection current 200 and an induction current 100 may be constant. Thereby, the sum of a calorific value from the semiconductor laser 1 for light emission and a calorific value of the semiconductor laser 2 for light emission is constant. Further, in the temperature stabilization circuit 40 negative feedback is applied to a temperature element 5 so that the value from a temperature sensor 4 may be constant. Further, by arranging the temperature sensor 4 in a position being about equally distant from the semiconductor laser 1 for light emission and from the semiconductor laser 2 for heating, light frequency control independent of a temperature control system can be done even when the injected current 100 is changed. |
其他摘要 | 用途:利用半导体模块通过简单的控制电路实现光频的高速控制,方法是将半导体激光器与加热元件并排放置,以使来自所述半导体激光器和所述加热元件的热值之和不变。组成:来自半导体激光器1的光发射的光输出101在注入电流控制电路10,发热量稳定电路20和温度稳定电路40的控制下。发热量稳定电路20控制注入电流200所以注入电流200和感应电流100的总和可以是恒定的。因此,来自用于发光的半导体激光器1的发热值和用于发光的半导体激光器2的发热量之和是恒定的。此外,在温度稳定电路40中,负反馈被施加到温度元件5,使得来自温度传感器4的值可以是恒定的。此外,通过将温度传感器4布置在与用于发光的半导体激光器1和从用于加热的半导体激光器2大约相等的距离的位置,即使在注入的电流100时也可以进行独立于温度控制系统的光频率控制。改变了。 |
申请日期 | 1989-07-17 |
专利号 | JP1991048477A |
专利状态 | 失效 |
申请号 | JP1989182705 |
公开(公告)号 | JP1991048477A |
IPC 分类号 | H04B10/572 | H01S5/00 | H01S5/024 | H01S5/026 | H01S5/042 | H01S5/068 | H04B10/07 | H04B10/293 | H04B10/564 | H01S3/096 | H01S3/18 | H04B10/04 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/70937 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | KITAJIMA SHIGEKI,KAYANE NAOKI,SASAKI SHINYA,et al. Semiconductor laser device. JP1991048477A[P]. 1991-03-01. |
条目包含的文件 | ||||||
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JP1991048477A.PDF(217KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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