Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	WATABE NOBUTAKA
	1991-01-08
专利权人	NEC CORP
公开日期	1991-01-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce an impedance at the time of parallel resonance and to prevent electric characteristics from deteriorating by forming boards of the cooling side and heat sinking side of an electronic cooling element in a laminated structure of a high permittivity ceramic plate and a metal plate. CONSTITUTION:A cooling side board of an electronic cooling element 13 is formed in a laminated structure of a high permittivity ceramic plate 8 having 100 or more of permittivity and formed with a wiring pattern for connecting a thermoelement one side surface and a metallized pattern on the other surface and a metal plate 9. A heat sinking side board of the element 13 is formed in a laminated structure of a high permittivity ceramic plate 10 having 100 or more of permittivity formed with a wiring pattern for connecting a thermoelement on one side surface and with a metallized pattern on the other surface, and a metal plate 1 For example, barium titanate is used as the high permittivity ceramics, the thicknesses of the plates 8, 10 are set to 0.15mm. In order to supplement a decrease in mechanical strength upon decrease in the thickness, a laminated structure of close contact secure with the plates 9, 11 made of copper, tungsten, etc.
其他摘要	目的：通过在高介电常数陶瓷板和金属板的层叠结构中形成电子冷却元件的冷却侧和散热侧的板，降低并联谐振时的阻抗，并防止电特性劣化。组成：电子冷却元件13的冷却侧板形成为具有100或更高介电常数的高介电常数陶瓷板8的层叠结构，并形成有用于连接热电元件一侧表面和金属化图案的布线图案。元件13的散热侧板形成为具有100或更高介电常数的高介电常数陶瓷板10的层叠结构，该高介电常数陶瓷板10形成有用于在一侧表面上连接热电元件的布线图案和在另一个表面上具有金属化图案，以及金属板1例如，使用钛酸钡作为高介电常数陶瓷，板8,10的厚度设定为0.15mm。为了在厚度减小时补充机械强度的降低，紧密接触的层压结构与由铜，钨等制成的板9,11固定。
申请日期	1989-05-29
专利号	JP1991001587A
专利状态	失效
申请号	JP1989135031
公开（公告）号	JP1991001587A
IPC 分类号	H01L23/38 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70923
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	WATABE NOBUTAKA. Semiconductor laser device. JP1991001587A[P]. 1991-01-08.

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