Semiconductor device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device
其他题名	Semiconductor device
	KOMIYA YOSHIO
	1990-12-11
专利权人	NISSAN MOTOR CO LTD
公开日期	1990-12-11
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To easily constitute an optoelectric IC(O-E IC) of three dimensional structure by a method wherein a semiconductor device and an optical component both formed on a semiconductor layer are made to operate together enabling their functions to correlate organically with each other. CONSTITUTION:A recess 22 is provided onto the surface of a board 101 which includes a semiconductor layer which constitutes a three dimensional device, wiring regions 7A and 21A are provided even to the base of the recess 22, a signal can be transmitted between the primary side and the rear side of the board 101 which includes the semiconductor layer through the intermediary of signal transmitting means 6 and 16 located on the base of the recess 22, and prescribed parts of an upper and a lower board, 101 and 102, are electrically connected. An micro-optical component 502 provided, at least, onto the board 102 and a semiconductor device 501 provided at a position on the other board 101 corresponding to the position where the optical component 502 is provided are so constituted that they operate as being optically coupled. By this setup, various types of components can be three-dimensionally constituted in lamination, so that optoelectric system can be easily constituted into an IC.
其他摘要	目的：通过一种方法，容易地构成三维结构的光电IC（O-E IC），其中使形成在半导体层上的半导体器件和光学元件一起工作，使它们的功能相互有机地相互关联。组成：凹槽22设置在板101的表面上，板101包括构成三维器件的半导体层，布线区域7A和21A甚至设置在凹槽22的基部，信号可以在初级之间传输通过位于凹槽22的基部上的信号传输装置6和16的中间板包括半导体层的板101的侧面和后侧，以及上板101和下板102的规定部分是电的连接的。至少设置在板102上的微光学元件502和设置在另一个板101上与设置光学元件502的位置相对应的位置处的半导体器件501构成为它们作为光耦合操作。。通过这种设置，可以在层压中三维地构成各种类型的部件，使得光电系统可以容易地构成IC。
申请日期	1989-05-15
专利号	JP1990299259A
专利状态	失效
申请号	JP1989118810
公开（公告）号	JP1990299259A
IPC 分类号	G02B6/122 \| G02B6/12 \| H01L27/00 \| H01L27/15 \| H01S5/00 \| H04B10/40 \| H04B10/50 \| H04B10/60 \| H04B10/80 \| H01S3/18 \| H04B10/02
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70920
专题	半导体激光器专利数据库
作者单位	NISSAN MOTOR CO LTD
推荐引用方式 GB/T 7714	KOMIYA YOSHIO. Semiconductor device. JP1990299259A[P]. 1990-12-11.

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