Semiconductor laser coupling device

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	Semiconductor laser coupling device
其他题名	Semiconductor laser coupling device
	ADACHI AKIHIRO; YAMASHITA JUNICHIRO
	1988-12-16
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1988-12-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To miniaturize size as a whole, and to monitor outgoing beams from a semiconductor laser by using a cylindrical lens made of a high index crystal as a lens employed for the coupling system of the semiconductor laser and an optical fiber and simultaneously utilizing the cylindrical lens made of the high index crystal as an external resonator for the semiconductor laser. CONSTITUTION:The parallel pencil 3 of rays propagated in a cylindrical lens 10 made of an silicon crystal is reflected partially by a flat surface 12, and the remainder is transmitted. Reflected beams return in the same optical path and are projected to a semiconductor laser 1 again, and transmitted beams are coupled with a single mode fiber terminal 6 by a condenser lens 13. The back outgoing beams 2 of the semiconductor laser 1 are received by a photodetector 14, and flowing currents are monitored, thus monitoring an output from the semiconductor laser A substance between a front outgoing edge face 9 in the semiconductor laser 1 shaping an external resonator and the flat surface 12 is occupied approximately by the silicon crystal, a refractive index thereof is approximately 3.5, and external cavity length L0 required for bringing emission spectral line width to 1/100 extends over approximately 3mm. Accordingly, external cavity length L0 can be brought to 1/3 or less.
其他摘要	目的：通过使用由高折射率晶体制成的柱面透镜作为用于半导体激光器和光纤的耦合系统的透镜并同时利用圆柱形，整体地使尺寸小型化并监视来自半导体激光器的出射光束。由高折射率晶体制成的透镜作为半导体激光器的外部谐振器。组成：在由硅晶体制成的柱面透镜10中传播的平行铅笔3被平面12部分反射，其余部分被透射。反射光束在相同的光路中返回并再次投射到半导体激光器1，并且透射光束通过聚光透镜13与单模光纤端子6耦合。半导体激光器1的反向输出光束2由光电探测器14和流动电流被监视，从而监视来自半导体激光器1的输出。形成外部谐振器的半导体激光器1中的前出射边缘面9与平坦表面12之间的物质大致被硅晶体占据，其折射率约为3.5，使发射光谱线宽度达到1/100所需的外腔长度L0延伸约3mm。因此，外腔长度L0可以达到1/3或更小。
申请日期	1987-06-11
专利号	JP1988308988A
专利状态	失效
申请号	JP1987145661
公开（公告）号	JP1988308988A
IPC 分类号	G02B6/42 \| H01S5/00 \| H01S5/14 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70785
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ADACHI AKIHIRO,YAMASHITA JUNICHIRO. Semiconductor laser coupling device. JP1988308988A[P]. 1988-12-16.

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