Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KIMURA YOSHINARI
	1988-07-04
专利权人	NEC CORP
公开日期	1988-07-04
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve the surge-withstanding capability of a laser device by a method wherein a semiconductor element is mounted on a stem with the intermediary of a high-resistance heat sink, the side opposite to the side involved in the mounting is connected to the mount by an external lead insulated from the stem, and the side of the high-resistance heat sink opposite to the side involved in the mounting is also connected to the external lead. CONSTITUTION:A semiconductor laser element 2 is mounted to a stem 1 through the intermediary of a heat sink 3, and the side of the element 2 opposite to the side involved in the mounting is connected to the stem 1, and the mounting side of the element 2 is connected to a positive potential lead 4 insulated from the stem 1, both by a bonding wire 7. When a surge signal is applied, the high- resistance heat sink 3 constitutes a parallel circuit together with the element 2, absorbing a portion of the surge signal. In this way, with not all the surge signal being applied to the semiconductor laser element 2, the device is improved in terms of its surge-withstanding capability.
其他摘要	目的：为了通过一种方法提高激光器件的抗浪涌能力，其中半导体元件安装在具有高阻散热器中间的杆上，与安装中涉及的一侧相对的一侧连接到通过与杆绝缘的外部引线安装，并且高强度散热器的与安装所涉及的一侧相对的一侧也连接到外部引线。组成：半导体激光元件2通过散热器3的中介安装到杆1，并且元件2的与安装所涉及的一侧相对的一侧连接到杆1，并且安装侧元件2通过接合线7连接到与杆1绝缘的正电位引线4.当施加浪涌信号时，高电阻散热器3与元件2一起构成并联电路，吸收一部分浪涌信号以这种方式，由于并非所有的浪涌信号都施加到半导体激光器元件2上，所以该装置在其抗浪涌能力方面得到改善。
申请日期	1986-12-23
专利号	JP1988160291A
专利状态	失效
申请号	JP1986314859
公开（公告）号	JP1988160291A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70744
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KIMURA YOSHINARI. Semiconductor laser device. JP1988160291A[P]. 1988-07-04.

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