Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	ISHIKAWA HIROSHI
	1988-06-29
专利权人	FUJITSU LTD
公开日期	1988-06-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To isolate currents for generating laser light and for tuning the light and to make it possible to couple the light between active layers for generating and tuning the laser light, by arranging the first and second stripe-shaped active layers in close proximity, and tuning the oscillating wavelength of the laser light generated in the first active layer at the DBR region of the second active layer. CONSTITUTION:A mesa shaped stripe is formed, and completely isolated two active layers 12 and 13 are arranged in close proximity. A diffraction grating 25 is formed beneath the active layer 13, i.e., on the side of a substrate 20 through a guide layer 24. Therefore currents can be made to flow through the active layers 12 and 13 in completely isolated mode. The light, which is generated in the active layer 12, is coupled to the active layer 13 during the propagation in the direction of the stripe. The light undergoes feedback in a DBR region 13A. The Bragg wavelength is controlled depending on the current, which is made to flow through the DBR region 13A, i.e., the active layer 13. Thus the oscillating wavelength can be tuned. Said optical coupling can be readily obtained by selecting the width of the active layers 12 and 13 or the interval between the layers 12 and 13.
其他摘要	目的：通过将第一和第二条形有源层布置得非常接近，隔离用于产生激光和调谐光的电流，并使有可能在有源层之间耦合光以产生和调谐激光。调整在第二有源层的DBR区域的第一有源层中产生的激光的振荡波长。组成：形成台面形条纹，完全隔离的两个有源层12和13紧密排列。衍射光栅25形成在有源层13下方，即通过引导层24形成在基板20的侧面上。因此，可以使电流以完全隔离的模式流过有源层12和13。在有源层12中产生的光在沿条纹方向传播期间耦合到有源层13。光在DBR区域13A中经历反馈。根据电流控制布拉格波长，使其流过DBR区域13A，即有源层13.因此，可以调谐振荡波长。通过选择有源层12和13的宽度或层12和13之间的间隔，可以容易地获得所述光学耦合。
申请日期	1986-12-20
专利号	JP1988156382A
专利状态	失效
申请号	JP1986302869
公开（公告）号	JP1988156382A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70743
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	ISHIKAWA HIROSHI. Semiconductor light emitting device. JP1988156382A[P]. 1988-06-29.

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