Semiconductor laser device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser device
其他题名	Semiconductor laser device
	KOBAYASHI MASAYOSHI; MORI TAKAO; CHIBA KATSUAKI; SATOU NOBU; HIRAO MOTONAO; NAKAMURA MICHIHARU
	1985-11-27
专利权人	HITACHI SEISAKUSHO KK
公开日期	1985-11-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent a short circuit due to molten solder to the side surface of a laser chip by forming a groove along the periphery or a trapezoid stepped section in size slightly smaller than a bonding region in the laser chip to the surface of a sub-mount. CONSTITUTION:A resin mask 3 having a rectangular narrow striped pattern smaller than the size of a laser chip is formed in the and directions to a thermal oxide film 2 on the (100) face of an Si substrate The oxide film 2 is etched by using HF:NH4F=1:6, V grooves 4 are shaped through anisotropic etching by KOH, the oxide film 2 and the mask 3 are removed, and a sub-mount is formed through cutting 5. The laser chip 7 is placed on the sub- mount 8 so that the grooves 4 are hidden under the chip 7, load is applied to the chip 7, and the sub-mount 8 is heated to melt In as a solder material and the chip is bonded with the sub-mount. According to said constitution, short circuits by the solder material and the partial shielding of an output from a laser due to the bumps by solder and not generated.
其他摘要	用途：通过沿周边形成凹槽或梯形阶梯部分的尺寸略小于激光芯片中的粘合区域到子表面，防止熔融焊料因激光芯片侧面而发生短路。安装。组成：在和方向上形成一个小于激光芯片尺寸的矩形窄条纹图案的树脂掩模3到Si衬底（100）面上的热氧化膜2 通过使用HF：NH4F = 1：6蚀刻氧化物膜2，通过KOH的各向异性蚀刻来成形V形槽4，去除氧化物膜2和掩模3，并且通过切割形成子底座5激光器芯片7放置在子底座8上，使得凹槽4隐藏在芯片7下方，负载施加到芯片7，并且子底座8被加热以熔化In作为焊接材料并且芯片与子底座粘合在一起。根据所述构造，焊料材料引起短路，并且由于焊料产生的凸起部分屏蔽了激光器的输出而没有产生。
申请日期	1985-04-25
专利号	JP1985239086A
专利状态	失效
申请号	JP1985087625
公开（公告）号	JP1985239086A
IPC 分类号	H01L21/52 \| H01L21/58 \| H01S5/00 \| H01S5/022 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70639
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KOBAYASHI MASAYOSHI,MORI TAKAO,CHIBA KATSUAKI,et al. Semiconductor laser device. JP1985239086A[P]. 1985-11-27.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1985239086A.PDF（156KB）	专利		开放获取	CC BY-NC-SA	请求全文