Semiconductor laser array device

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	Semiconductor laser array device
其他题名	Semiconductor laser array device
	KUME MASAHIRO; ITO KUNIO; SHIMIZU YUICHI; WADA MASARU
	1986-07-19
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1986-07-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To monitor optical outputs precisely by several P-N junction photodiodes by integrally integrating the P-N junction photodiodes while being each made to correspond onto a GaAs heat sink, on which a plurality of semiconductor laser elements are mounted, and isolating several photodiode by regions left through etching. CONSTITUTION:P-N junctions are formed onto an N-type GaAs heat sink 2, and Cr/Au electrodes 4 are evaporated and photodetecting elements 3 insularly shaped through etching are integrated integrally and prepared immediately after the rear end surface of a laser element An electrode 5 and the heat sink 2 are isolated electrically because of high impedance due to Schottky barriers. Regions 8 in which mounting sections are left through etching are isolated so that the semiconductor laser elements 1 can be driven severally. According to such constitution, laser beams emitted from the rear end surfaces of respective semiconductor laser element 1 are projected to the P-N junction photodiodes 3, thus generating monitor photocurrents. Laser beams from adjacent elements 1 are stopped by the region 8 left through etching.
其他摘要	目的：通过整体集成PN结光电二极管，精确地监测多个PN结光电二极管的光输出，同时每个PN结光电二极管对应一个GaAs散热器，其上安装有多个半导体激光器元件，并通过剩余的区域隔离多个光电二极管蚀刻。组成：PN结形成在N型GaAs散热器2上，Cr / Au电极4蒸发，并且通过蚀刻岛状形成的光电检测元件3整体集成在激光元件1的后端表面之后立即制备。电极5和散热器2由于肖特基势垒导致的高阻抗而电隔离。其中安装部分通过蚀刻被隔离的区域8被隔离，使得半导体激光器元件1可以被分别驱动。根据这种结构，从各个半导体激光元件1的后端表面发射的激光束被投射到P-N结光电二极管3，从而产生监视器光电流。来自相邻元件1的激光束通过蚀刻留下的区域8停止。
申请日期	1985-01-07
专利号	JP1986159788A
专利状态	失效
申请号	JP1985001272
公开（公告）号	JP1986159788A
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70613
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	KUME MASAHIRO,ITO KUNIO,SHIMIZU YUICHI,et al. Semiconductor laser array device. JP1986159788A[P]. 1986-07-19.

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