Submounting device for semiconductor laser

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	Submounting device for semiconductor laser
其他题名	Submounting device for semiconductor laser
	OOTSUKA NAOTAKA
	1984-09-29
专利权人	SHARP KK
公开日期	1984-09-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable to conduct the Joule heat generated at a P-N junction to a heat sink member with good efficiency by a method wherein silicon is used as a submounting member, and many micro recesses are formed on the junction surface of the heat sink side of said member. CONSTITUTION:A semiconductor laser element 2 is brazed to a submounting member 6 with a solder 3, and a heat sink member 4 is brazed to said member 6 with a solder 5. The many recesses 7 are previously formed on the junction surface of the heat sink side of the submounting member 6. As the heat sink member 4, a metal excellent in thermal conductivity such as Cu and Ag is used, and Si is used as the submounting member 6. E.g. In, Sn, and In-Sn alloy is used for the solder 5 and 6.
其他摘要	用途：通过硅用作子安装构件的方法，能够以高效率将PN结产生的焦耳热传导到散热器构件，并且在散热器侧的接合面上形成许多微小凹槽。成员说。组成：半导体激光元件2用焊料3钎焊到子安装件6上，散热器件4用焊料5钎焊到所述件6上。许多凹槽7预先形成在热量的连接面上作为散热构件4，使用导热性优异的金属，例如Cu和Ag，并且使用Si作为子安装构件6。 In，Sn和In-Sn合金用于焊料5和6。
申请日期	1983-03-22
专利号	JP1984172787A
专利状态	失效
申请号	JP1983047611
公开（公告）号	JP1984172787A
IPC 分类号	H01L23/14 \| H01L21/52 \| H01S5/00 \| H01S5/02 \| H01S5/022 \| H01S5/024 \| H01L21/58 \| H01L23/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70514
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	OOTSUKA NAOTAKA. Submounting device for semiconductor laser. JP1984172787A[P]. 1984-09-29.

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