Photo semiconductor device

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	Photo semiconductor device
其他题名	Photo semiconductor device
	KAMATA TOORU
	1984-05-22
专利权人	NIPPON DENKI KK
公开日期	1984-05-22
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a photo semiconductor device of high photo coupling efficiency with a single mode fiber and small variation of the efficiency with the variation of ambient temperatures by a method wherein a hole is provided through a member for holding a lens, and a pin provided on a heat sink which holds a photo element is inserted into this hole and fixed. CONSTITUTION:A plurality of holes are bored through the semi-circular metallic holding member 11, composed of Cu, etc., plated with Au of good wetting property with solder over the surface, the lower semisphere of a spherical lens 10 composed of high refractive index glass is fitted therein, and the lower side surface of the upper semisphere is fixed on the member 11 by means of a low melting point solder glass 12 whose main component is PbO. On the other hand, a semiconductor laser element 20 positioned at the lower surface of the lens 10 is mounted on the heat sink 30 via a member 21 such as a diamond of high thermal conductivity, and a plurality of projecting pins 31 provided in the sink 30 are fixed in another hole provided at the end part of the holding member 11 by means of Sn-Pb series solder 40. Thereafter, the entire surface is covered with a transparent glass surface plate 51, and the end part thereof is supported by a holding metal piece 50.
其他摘要	目的：利用单模光纤获得光耦合效率高的光电半导体器件，并通过一种方法提供效率随环境温度变化的小变化，其中通过用于保持透镜的构件提供孔，并提供引脚在保持光电元件的散热器上插入该孔并固定。组成：通过半圆形金属保持构件11钻出多个孔，由Cu等构成，在表面上镀有具有良好润湿性的Au和焊料，由高折射率组成的球面透镜10的下半球在其中安装有折射率玻璃，并且上半球的下侧表面通过主要成分为PbO的低熔点焊料玻璃12固定在构件11上。另一方面，位于透镜10的下表面的半导体激光元件20经由诸如高导热率的金刚石的构件21和设置在水槽中的多个突出销31安装在散热器30上。通过Sn-Pb系列焊料40将30固定在设置在保持件11端部的另一个孔中。然后，用透明玻璃表面板51覆盖整个表面，并且其端部由一个孔支撑。拿着金属片50。
申请日期	1982-11-12
专利号	JP1984088886A
专利状态	失效
申请号	JP1982198555
公开（公告）号	JP1984088886A
IPC 分类号	H01L33/58 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70506
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KAMATA TOORU. Photo semiconductor device. JP1984088886A[P]. 1984-05-22.

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