Manufacture of semiconductor device

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	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	YAMAZOE YOSHIMITSU; SASAYA YUKIHIRO; OOTANI SHIYUNJI
	1983-08-16
专利权人	SUMITOMO DENKI KOGYO KK
公开日期	1983-08-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To perform the isolation due to wafer cleavage easily and securely by a method wherein a semiconductor wafer to perform cleavage is adhered on a bimetal, then the temperature is increased or decreased, then the cleavage is provided by concentrating the stress at the very small damaged part perviously provided in the neighborhood of the end surface of the semiconductor wafer due to the deformation of the bimetal, and finally the wafer is exfoliated from the bimetal. CONSTITUTION:When the bimetal 3 whereon the wafer 1 is adhered is heated, and thus the temperature is increased, the bimetal 3 deforms so that the side of a material 6 of large coefficient of thermal expansion becomes projected, then the stress generated by its strain concentrates at the part of the very small damage 2 which gives the starting point of cleavage previously provided in the neighborhood of the end surface of the wafer 1, and accordingly a cleavage line runs from this part resulting in cleavage. After this cleavage is finished, the bimetal 3 whereon the wafer 1 is adhered is cooled, and the bimetal 3 is exfoliated from the wafer 1 for semiconductor laser which is cleaved by using organic solvent.
其他摘要	目的：通过一种方法，通过一种方法，可以方便，安全地进行晶片解理，其中半导体晶片在双金属上粘附，然后温度升高或降低，然后通过将应力集中在非常小的位置来提供解理由于双金属的变形，在半导体晶片的端面附近可渗透地设置的损坏部分，最后从双金属片上剥离晶片。组成：当粘附晶片1的双金属3被加热，因此温度升高时，双金属3变形，使得热膨胀系数大的材料6的一侧投射，然后由其应变产生的应力浓缩在非常小的损伤2的部分，其给出了先前在晶片1的端面附近提供的解理的起始点，因此从该部分开始的解理线导致解理。在完成该解理之后，冷却附着有晶片1的双金属3，并且从用于半导体激光器的晶片1剥离双金属3，该半导体激光器通过使用有机溶剂被切割。
申请日期	1982-02-10
专利号	JP1983138050A
专利状态	失效
申请号	JP1982019984
公开（公告）号	JP1983138050A
IPC 分类号	H01L21/301 \| H01L21/302 \| H01S5/00 \| H01L21/304 \| H01L21/78 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70467
专题	半导体激光器专利数据库
作者单位	SUMITOMO DENKI KOGYO KK
推荐引用方式 GB/T 7714	YAMAZOE YOSHIMITSU,SASAYA YUKIHIRO,OOTANI SHIYUNJI. Manufacture of semiconductor device. JP1983138050A[P]. 1983-08-16.

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