Device for driving semiconductor laser

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	Device for driving semiconductor laser
其他题名	Device for driving semiconductor laser
	SATO YASUYUKI; SHINODA MASAHISA; KARAKI MORIHIRO
	1991-05-30
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1991-05-30
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To dispense with adjustment of the positioning of a semiconductor laser array to a photodetector by a method wherein the photodetector, which receives en bloc a plurality of light beams from a plurality of semiconductor laser light sources and is divided into parts whose number is identical with the number of the light beams, is provided, the output signal of the photodetector is operated and the outputs of the light beams are individually monitored. CONSTITUTION:A photodetector 22, which receives en bloc a plurality of emitted light beams 3a to 3c from a plurality of semiconductor laser light sources LDa to LDc and consists of light-receiving elements whose number is identical with the number of the laser light sources LDa to LDc, is provided. The optical outputs of the laser light sources LDa to LDc are operated by a detection signal from the photodetector 22 and are individually monitored and at the same time, the laser light sources LDa to LDc are made to light on the basis of the output of an arithmetic processing circuit 25. Thereby, adjustment of the positioning of a plurality of the semiconductor laser light sources to the photodetector 22 becomes unnecessary.
其他摘要	目的：通过一种方法调整半导体激光器阵列在光电探测器上的定位，其中光电探测器从多个半导体激光光源接收多个光束并分成数量相同的部分。在提供光束数量的情况下，操作光电检测器的输出信号并单独监视光束的输出。组成：一个光电探测器22，它从多个半导体激光光源LDa到LDc整体接收多个发射光束3a到3c，并由光接收元件组成，光接收元件的数量与激光光源LDa的数量相同提供给LDc。激光光源LDa至LDc的光输出由来自光检测器22的检测信号操作并被单独监视，同时，激光光源LDa至LDc基于输出的光输出而被点亮。由此，不需要调整多个半导体激光光源到光检测器22的定位。
申请日期	1989-10-13
专利号	JP1991127888A
专利状态	失效
申请号	JP1989267340
公开（公告）号	JP1991127888A
IPC 分类号	G11B7/125 \| H01S5/068 \| H01S3/133
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/69071
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	SATO YASUYUKI,SHINODA MASAHISA,KARAKI MORIHIRO. Device for driving semiconductor laser. JP1991127888A[P]. 1991-05-30.

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