Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser driving device | |
其他题名 | Semiconductor laser driving device |
OTSUKI NORIYOSHI | |
1988-05-09 | |
专利权人 | SEIKO EPSON CORP |
公开日期 | 1988-05-09 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To make it possible to use low-power laser by lowering an amplitude of a high frequency current so that the minimum of a laser driving current is not below a threshold value of laser oscillation current. CONSTITUTION:When only a direct current flowing from a d-c power source 5 is used as a laser driving current, semiconductor laser power is also obtained. A high-frequency current generated by an oscillator 2 is superposed on the d-c current and used as a laser driving current, so that a state of laser beam power is always changing. Beams generated from the semiconductor laser are changed into parallel beams by a collimator lens 6 and next focused on a light record medium by an object lens 7 and read/written as information. Because the high-frequency current is cut off by a coil 4, the high-frequency current does not have direct effects on the d-c power source. The d c component is cut by a capacitor 3 so as to have no effect on the oscillator. |
其他摘要 | 目的:通过降低高频电流的幅度,使激光器驱动电流的最小值不低于激光器振荡电流的阈值,可以使用低功率激光器。组成:当只有从d-c电源5流出的直流电流用作激光器驱动电流时,也可以获得半导体激光器功率。由振荡器2产生的高频电流叠加在d-c电流上并用作激光器驱动电流,从而激光束功率的状态总是在变化。由半导体激光器产生的光束由准直透镜6变成平行光束,然后由物镜7聚焦在光记录介质上并作为信息读/写。由于线圈4切断了高频电流,因此高频电流对d-c电源没有直接影响。 d c分量由电容器3切断,以便对振荡器没有影响。 |
申请日期 | 1986-10-21 |
专利号 | JP1988104391A |
专利状态 | 失效 |
申请号 | JP1986250063 |
公开(公告)号 | JP1988104391A |
IPC 分类号 | G11B7/125 | H01S5/062 | H01S5/068 | H01S3/133 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/68895 |
专题 | 半导体激光器专利数据库 |
作者单位 | SEIKO EPSON CORP |
推荐引用方式 GB/T 7714 | OTSUKI NORIYOSHI. Semiconductor laser driving device. JP1988104391A[P]. 1988-05-09. |
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