Semiconductor laser driving apparatus

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	Semiconductor laser driving apparatus
其他题名	Semiconductor laser driving apparatus
	MIYAIRI NOBUO
	1987-10-29
专利权人	OLYMPUS OPTICAL CO LTD
公开日期	1987-10-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To control the amount of light emitted by an LD with high precision while preventing the LD from being damaged, by amplifying a voltage produced by photovoltaic current of a light-receiving element by means of a PNP transistor whose collector is grounded and controlling an NPN Transistor driven by the same power source. CONSTITUTION:An anode of an LD is connected to an emitter of an NPN transistor 12 while a cathode is grounded. A collector of the transistor 12 is connected to a positive terminal of a single positive power source and +Vcc is applied thereto. A cathode of a PD 13 is grounded and an anode thereof is grounded through a load resistance 14. A voltage corresponding to photovoltaic current produced in accordance with light emitted by the LD 11 is applied to the base of a PNP transistor 15. A difference between a voltage obtained by amplifying a voltage e1 produced at the resistance 14 and a voltage from a reference voltage source 20 is obtained by means of a substracter 19, and the base voltage of the transistor 12 is controlled so that a constant amount of light is emitted from the LD 1
其他摘要	用途：通过PNP晶体管放大光接收元件的光伏电流产生的电压来控制LD发出的光量，同时防止LD损坏，同时通过PNP晶体管将其集电极接地并控制NPN晶体管由相同的电源驱动。组成：LD的阳极连接到NPN晶体管12的发射极，而阴极接地。晶体管12的集电极连接到单个正电源的正端子，并且+ Vcc施加到其上。 PD13的阴极接地，其阳极通过负载电阻14接地。对应于根据LD11发射的光产生的光电流的电压施加到PNP晶体管15的基极。通过放大在电阻14处产生的电压e1和来自参考电压源20的电压获得的电压通过减法器19获得，并且控制晶体管12的基极电压以便发射恒定量的光来自劳工处11。
申请日期	1986-04-22
专利号	JP1987248278A
专利状态	失效
申请号	JP1986091170
公开（公告）号	JP1987248278A
IPC 分类号	G11B7/125 \| H01S5/068 \| H01S5/0683 \| H01S3/133
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/68862
专题	半导体激光器专利数据库
作者单位	OLYMPUS OPTICAL CO LTD
推荐引用方式 GB/T 7714	MIYAIRI NOBUO. Semiconductor laser driving apparatus. JP1987248278A[P]. 1987-10-29.

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