Xi'an Institute of Optics and Precision Mechanics,CAS
Driving method for semiconductor laser | |
其他题名 | Driving method for semiconductor laser |
YAMAGISHI FUMIO; KITAGAWA SHUNJI; HASEGAWA SHINYA; IKEDA HIROYUKI; INAGAKI YUSHI | |
1986-11-13 | |
专利权人 | FUJITSU LTD |
公开日期 | 1986-11-13 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To prevent the mode hop of laser light securely by generating multimode light which has more modes in an off period wherein laser light is not emitted, and thus raising the temperature of the joint part of a semiconductor laser and decreasing the temperature difference from the temperature in an off period. CONSTITUTION:The laser light 9 has single wavelength lambda1 in a period TB in which the semiconductor laser LD inputs a pulse 7 and turns on. A high frequency pulses 10 is superposed in an off period TA to generate multimode light having as many mode as possible, so each light component has small power. The multimode light emitted in the off period differ in wavelength, so light diffracted through a hologram 3 is dispersed and respective mode light components have small power, so light having weak intensity spreads widely over an irradiated surface 12, so no practical problem is generated. |
其他摘要 | 用途:通过产生在不发射激光的关闭期间具有更多模式的多模光来安全地防止激光的模式跳跃,从而提高半导体激光器的接合部分的温度并降低与之相比的温差。关闭期间的温度。组成:激光9在时间段TB中具有单波长λ1,其中半导体激光器LD输入脉冲7并导通。高频脉冲10在关断时段TA中叠加以产生具有尽可能多的模式的多模光,因此每个光分量具有小的功率。在关闭时段中发射的多模光的波长不同,因此通过全息图3衍射的光被分散并且各模式光分量具有小的功率,因此具有弱强度的光在照射表面12上广泛地扩散,因此不会产生实际问题。 |
申请日期 | 1985-05-10 |
专利号 | JP1986256362A |
专利状态 | 失效 |
申请号 | JP1985099247 |
公开(公告)号 | JP1986256362A |
IPC 分类号 | H01S5/06 | B41J2/44 | G03G15/04 | H01S3/103 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/68785 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | YAMAGISHI FUMIO,KITAGAWA SHUNJI,HASEGAWA SHINYA,et al. Driving method for semiconductor laser. JP1986256362A[P]. 1986-11-13. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1986256362A.PDF(400KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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