Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	MATSUO HIROSHI
	1985-08-20
专利权人	TOSHIBA KK
公开日期	1985-08-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce the variation of an optical output by feeding back and projecting the amount of light of 1% or 10% of laser beams outputted to the outside from a laser element to the light-emitting end surface of the laser element. CONSTITUTION:A semiconductor laser element 40 is fixed at one end of a fixing base 42 on a discoid base 41, and a photodetector 43 is mounted to the discoid base 41 so as to be opposed to a first light-emitting end surface 44 in the element 40. The element 40, the fixing base 42 and the photodetector 43 are surrounded by a cylindrical cover 45 and a reflecting element 46. Laser beams 49 radiated from a second light-emitting end surface 47 in the element 40 are transmitted through the reflecting element 46 and projected to the outside, but the amount of light of 1% or 10% of the whole projecting beams is reflected by the reflecting element 46, and fed back and projected to the light-emitting end surface 47. One part of laser beams 49 from the light-emitting end surface 44 is projected to the photodetector 43, and laser beams 48 are observed and controlled. Accordingly, the variation of an optical output is reducted.
其他摘要	用途：通过反馈和投射从激光元件输出到外部的激光束的1％或10％的光量到激光元件的发光端面来减少光输出的变化。组成：半导体激光元件40固定在盘状基座41上的固定基座42的一端，光电探测器43安装在盘状基座41上，以便与第一发光端面44相对。元件40，固定基座42和光电探测器43由圆柱形盖45和反射元件46围绕。从元件40中的第二发光端面47辐射的激光束49透过反射元件40。元件46投射到外部，但是整个投射光束的1％或10％的光量被反射元件46反射，并反馈并投射到光发射端面47.激光的一部分来自光发射端表面44的光束49被投射到光电检测器43，并且观察和控制激光束48。因此，减少了光输出的变化。
申请日期	1984-01-27
专利号	JP1985158682A
专利状态	失效
申请号	JP1984011873
公开（公告）号	JP1985158682A
IPC 分类号	G11B7/125 \| H01S5/00 \| H01S5/022 \| H01S5/0683 \| H01S5/14 \| G11B7/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/68702
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	MATSUO HIROSHI. Semiconductor laser device. JP1985158682A[P]. 1985-08-20.

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