P-side ohmic electrode for compound semiconductor

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	P-side ohmic electrode for compound semiconductor
其他题名	P-side ohmic electrode for compound semiconductor
	MORI MITSUHIRO; SAITOU KATSUTOSHI; MORI TAKAO; HIRAO MOTONAO; CHIBA KATSUNUMA; IMAI KUNINORI; KATOU HIROSHI; KOBAYASHI MASAMICHI
	1984-01-21
专利权人	HITACHI SEISAKUSHO KK
公开日期	1984-01-21
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain the P ohmic electrode, heat resistance thereof is high and which is not exfoliated, by providing multilayered structure in which a first layer is made of Cr or Ti, a second layer of Mo or W and a third layer of Au. CONSTITUTION:An N type InGaAsP layer 34 of a conduction type different from a buried layer 32 consisting of P type InP formed to an N type InP substrate 31 is formed to the surface in order to limitedly flow currents through an InGaAsP active layer 33 buried by the buried layer 32, a clad layer 35 consisting of P type InP and a high conduction layer 36 consisting of P type InGaAsP called a cap layer are formed, and an ohmic contact is easy to be obtained. Ti is applied in 50nm thickness was the first metallic layer 38, Mo on the layer 38 in 150nm thickness as the second metallic layer 39 and Au on the layer 39 in 1mum thickness as the third metallic layer 40. The sum of the film thickness of the first layer 38 and the second layer 39 does not exceed 400nm, and these layers are formed to an element with crystalline thickness of 150mum or less. Accordingly, adhesive property is excellent, cracks are not generated, heat resistance is high, and a diffusion to the electrode side of a semiconductor laser crystal and a diffusion into the crystal of Au or a solder material can be inhibited.
其他摘要	用途：为了获得P欧姆电极，通过提供其中第一层由Cr或Ti，第二层Mo或W和第三层Au制成的多层结构，其耐热性高且不剥离。组成：形成N型InGaAsP层34，其导电类型不同于由形成N型InP衬底31的P型InP组成的埋层32，以便有限地流过通过埋入的InGaAsP有源层33的电流。形成掩埋层32，由P型InP构成的包层35和由称为盖层的P型InGaAsP构成的高导电层36，并且容易获得欧姆接触。 Ti以50nm厚度施加第一金属层38，Mo在38层上以150nm厚度作为第二金属层39和Au在39层上以1μm厚度作为第三金属层40。膜厚度的总和第一层38和第二层39不超过400nm，并且这些层形成为结晶厚度为150μm或更小的元件。因此，粘合性优异，不产生裂缝，耐热性高，并且可以抑制向半导体激光晶体的电极侧的扩散和向Au或焊料的晶体中的扩散。
主权项	-
申请日期	1982-07-12
专利号	JP1984011675A
专利状态	失效
申请号	JP1982119771
公开（公告）号	JP1984011675A
IPC 分类号	H01L29/43 \| H01L21/28 \| H01L29/45 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67888
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	MORI MITSUHIRO,SAITOU KATSUTOSHI,MORI TAKAO,et al. P-side ohmic electrode for compound semiconductor. JP1984011675A[P]. 1984-01-21.

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