Xi'an Institute of Optics and Precision Mechanics,CAS
| Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers | |
| 其他题名 | Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers |
| GOMYO, AKIKO, C/O NEC CORP.; SUZUKI, TOHRU, C/O NEC CORP. | |
| 1995-09-27 | |
| 专利权人 | NEC CORPORATION |
| 公开日期 | 1995-09-27 |
| 授权国家 | 欧洲专利局 |
| 专利类型 | 发明申请 |
| 摘要 | 57 A heterojunction semiconductor device has a plurality of ordered phase alloy layers (1). Either the whole or a part of each of the ordered phase alloy layers has a crystal structure (triple-period structure) in which the ordered alloy (11) is of a composition corresponding to the [111]A direction and an anion composition modulation period that is triple that of a disordered structure (12). The double-period structure may alternatively be used. The triple-period or double-period structure applied to the layer structure of the heterostructure semiconductor device results in a reduction of the bandgap. |
| 其他摘要 | 异质结半导体器件具有多个有序相合金层（1）。每个有序相合金层的全部或一部分具有晶体结构（三重周期结构），其中有序合金（11）具有对应于[111] A方向和阴离子组成调制周期的成分。这是无序结构的三倍（12）。或者可以使用双周期结构。应用于异质结构半导体器件的层结构的三周期或双周期结构导致带隙的减小。 |
| 主权项 | A heterojunction semiconductor device which has an ordered structure of at least two kinds of anion on a face centered cubic (FCC) sublattice and is constituted by a plurality of kinds of compound semiconductor layers including one or more kinds of compound semiconductor alloys, wherein the improvement comprises a plurality of ordered Phase alloy layers (1), at least a part of each of said ordered phase alloy layers having a crystal structure (triple-period structure) in which the ordered alloy (11) is of a composition corresponding to direction "A" and which has an anion composition modulation period that is triple that of a disordered structure (12). |
| 申请日期 | 1995-02-24 |
| 专利号 | EP0669657A3 |
| 专利状态 | 失效 |
| 申请号 | EP1995102696 |
| 公开（公告）号 | EP0669657A3 |
| IPC 分类号 | C30B29/68 | H01L29/15 | H01L29/201 | H01L31/10 | H01L33/04 | H01L33/08 | H01L33/16 | H01L33/30 | H01S5/00 | H01S5/026 | H01S5/32 | H01S5/323 |
| 专利代理人 | - |
| 代理机构 | GLAWE, DELFS, MOLL & PARTNER |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/67734 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | GOMYO, AKIKO, C/O NEC CORP.,SUZUKI, TOHRU, C/O NEC CORP.. Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers. EP0669657A3[P]. 1995-09-27. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| EP0669657A3.PDF（201KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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