High efficiency intersubband semiconductor lasers

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	High efficiency intersubband semiconductor lasers
其他题名	High efficiency intersubband semiconductor lasers
	BOTEZ, DAN; XU, DAPENG, P.; MAWST, LUKE, J.
	2017-03-29
专利权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
公开日期	2017-03-29
授权国家	欧洲专利局
专利类型	发明申请
摘要	An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
其他摘要	子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有多层结构，包括电子注入器，具有至少一个量子阱的有源区和电子反射器。从喷射器以高能级注入有源区的电子随着例如中红外波长的光子的发射而弛豫到较低的能级。反射器以注入它们的较高能级反射电子，并在发射光子后从较低能级传输电子。在多级结构的每一侧上形成多层半导体，以提供穿过器件的传导并提供所发射光子的光学限制。
主权项	A semiconductor laser comprising a plurality of coupled laser stages, each stage comprising a multiple semiconductor layer structure including an electron injector, an active region coupled to the electron injector and an electron reflector coupled to the active region opposite the electron injector, wherein: (a) the electron injector has an upper miniband, a lower miniband, and a minigap; (b) the active region comprises at least one quantum well having associated therewith an upper energy level and a lower energy level, characterized in that electrons injected into the upper energy level of the active region from the lower miniband of the electron injector undergo a radiative transition to emit a photon as they decay from the upper energy level to the lower energy level; and (c) the electron reflector comprises an upper miniband, a lower minband, and a minigap, characterized in that the minigap acts as a reflector for electrons in the upper energy level of the active region and the lower miniband acts as a transmitter of the electrons that have decayed to the lower energy level of the active region to the lower miniband of the injector in the adjacent laser stage.
申请日期	2007-02-22
专利号	EP2002518A4
专利状态	申请中
申请号	EP2007757323
公开（公告）号	EP2002518A4
IPC 分类号	H01S5/00 \| H01S5/34
专利代理人	-
代理机构	PRICE, NIGEL JOHN KING
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67640
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN,XU, DAPENG, P.,MAWST, LUKE, J.. High efficiency intersubband semiconductor lasers. EP2002518A4[P]. 2017-03-29.