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Optically tuned transistor
其他题名Optically tuned transistor
BOSCO, BRUCE ALLEN; EMRICK, RUDY M.
2003-01-09
专利权人MOTOROLA, INC.
公开日期2003-01-09
授权国家美国
专利类型发明申请
摘要An optically tuned transistor network is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of complementary metal oxide semiconductors along with light sources such as vertical cavity surface emitting lasers in one integrated circuit. By coupling the light source to active devices fabricated on the same substrate and coupling them with optical interconnects, light can be illuminated on the active regions of the active devices to tune various performance characteristics of the active device.
其他摘要公开了一种光学调谐的晶体管网络。在单晶衬底上生长的高质量单晶材料外延层使得能够在一个集成电路中形成互补金属氧化物半导体以及诸如垂直腔表面发射激光器的光源。通过将光源耦合到在同一基板上制造的有源器件并将它们与光学互连耦合,可以在有源器件的有源区域上照射光,以调谐有源器件的各种性能特性。
主权项An optically tuned transistor network integrated on a single substrate, said single substrate comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said optically tuned transistor network comprising: a light source; a control circuit for modulating said light source; an optical interconnect coupled to said light source; and a transistor coupled to said optical interconnect, wherein performance characteristics of said transistor are affected by light from said light source.
申请日期2001-07-09
专利号US20030007533A1
专利状态失效
申请号US09/899996
公开(公告)号US20030007533A1
IPC 分类号H01L27/15 | H01S5/026 | H01S5/06 | H01S5/183 | H01S5/00
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/67451
专题半导体激光器专利数据库
作者单位MOTOROLA, INC.
推荐引用方式
GB/T 7714
BOSCO, BRUCE ALLEN,EMRICK, RUDY M.. Optically tuned transistor. US20030007533A1[P]. 2003-01-09.
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