Wavelength variable semiconductor device

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	Wavelength variable semiconductor device
其他题名	Wavelength variable semiconductor device
	TSUJI SHINJI; OKAI MAKOTO; KAYANE NAOKI; UOMI KAZUHISA; SAKANO SHINJI
	1989-05-18
专利权人	株式会社日立製作所
公开日期	1989-05-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a device which has excellent wavelength variability and mode stability in a single wavelength operation by a method wherein independent electrodes are provided so as to correspond to left and right diffraction lattices with a phase shift position in the middle to make the ratio of the applied currents variable. CONSTITUTION:A diffraction lattice 2 with a period of 240nm is formed on a substrate A guide layer 3, an active layer 4, a buffer layer 5, a cladding layer 6 and a surface layer 7 are built up on the diffraction lattice 2 and a high resistance layer 8 is buried in the surface. Then an anode 9 and a cathode 10 are formed on the top surface and the bottom surface respectively. The anode 9 is divided into two electrodes 91 and 92 so as to correspond to a phase shift position. Low reflectance films 12 are formed on the front end surface and the rear end surface to complete a device. If the ratio between current densities J1 and J2 applied th the divided anodes 91 and 92 is varied, a single mode oscillation is obtained when the ratio J1/(J1+J2) is between 0.3 and 0.7 and the wavelength is shifted continuously within this range and the variable width 1nm of the wavelength can be obtained. With this constitution, a highly reliable light source for coherent communication and multiwavelength communication can be obtained.
其他摘要	目的：通过一种方法获得在单波长操作中具有优异波长可变性和模式稳定性的装置，其中提供独立电极以对应于在中间具有相移位置的左和右衍射晶格以使得比率为施加的电流变量。组成：在基板1上形成周期为240nm的衍射晶格2.在衍射晶格2上建立引导层3，有源层4，缓冲层5，包层6和表面层7并且高电阻层8埋在表面中。然后分别在顶表面和底表面上形成阳极9和阴极10。阳极9被分成两个电极91和92，以对应于相移位置。在前端表面和后端表面上形成低反射膜12以完成器件。如果在分开的阳极91和92上施加的电流密度J1和J2之间的比率变化，则当比率J1 /（J1 + J2）在0.3和0.7之间并且波长在该范围内连续移动时，获得单模振荡。并且可以获得波长的1nm的可变宽度。利用这种结构，可以获得用于相干通信和多波长通信的高度可靠的光源。
主权项	-
申请日期	1987-11-11
专利号	JP1989125992A
专利状态	失效
申请号	JP1987283265
公开（公告）号	JP1989125992A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/06 \| H01S5/0625 \| H01S3/103
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67443
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	TSUJI SHINJI,OKAI MAKOTO,KAYANE NAOKI,et al. Wavelength variable semiconductor device. JP1989125992A[P]. 1989-05-18.

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