Manufacture of integrated optical element

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	Manufacture of integrated optical element
其他题名	Manufacture of integrated optical element
	KANAZAWA MAMORU; FUJIMA HARUMI
	1988-07-28
专利权人	TOSHIBA CORP
公开日期	1988-07-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To realize excellent light coupling of a laser and a light waveguide path, by etching a semiconductor surface on which a laser diode is formed and exposing a light emission part vertical to a main surface of a substrate and forming a buffer layer thereon and further forming a three-dimensional waveguide path along a laser light axis. CONSTITUTION:A laser diode active layer 2 made of InGaAsP is formed on an InP substrate 1, and a clad 3 is piled thereon, and then a laser light emission terminal surface 4 is formed by dry etching. The terminal surface 4 is vertical to a main surface of the substrate. Next, a SiO2 film is formed as a buffer layer 5 by a reduced-pressure CVD method in which a forced convection flux is used. In succession a glass film 6 is formed as a light waveguide path layer by a sputtering method, and a three-dimensional waveguide path is obtained by patterning so as to be coupled with a laser diode. Further, a SiO2 film is formed as a protective film 7 thereon, and an electrode 8 for the laser diode is formed to complete the manufacture of an integrated optical element.
其他摘要	目的：通过蚀刻其上形成有激光二极管的半导体表面并使发光部分垂直于基板的主表面并在其上形成缓冲层，进一步实现激光和光波导路径的优异光耦合。沿激光轴形成三维波导路径。组成：在InP衬底1上形成由InGaAsP制成的激光二极管有源层2，并在其上堆叠包层3，然后通过干法蚀刻形成激光发射端子表面4。端子表面4垂直于基板的主表面。接下来，通过使用强制对流焊剂的减压CVD法形成SiO 2膜作为缓冲层5。接着，通过溅射法形成玻璃膜6作为光波导路径层，并且通过图案化获得三维波导路径以便与激光二极管耦合。此外，在其上形成SiO2膜作为保护膜7，并且形成用于激光二极管的电极8以完成集成光学元件的制造。
主权项	-
申请日期	1987-01-26
专利号	JP1988182882A
专利状态	失效
申请号	JP1987014195
公开（公告）号	JP1988182882A
IPC 分类号	H01L27/15 \| G02B6/12 \| G02B6/122 \| H01L21/205 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67433
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	KANAZAWA MAMORU,FUJIMA HARUMI. Manufacture of integrated optical element. JP1988182882A[P]. 1988-07-28.

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