Photovolatically growing method

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	Photovolatically growing method
其他题名	Photovolatically growing method
	YAMAGUCHI AKIO
	1987-01-27
专利权人	FUJITSU LTD
公开日期	1987-01-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable selectively the production of a fine structure by disposing a substrate in a vacuum chamber, and selectively producing a substance to be produced from a raw gas by the heat of the substrate and the emission of an optical interference pattern to the substrate on the substrate. CONSTITUTION:A substrate 11 is disposed in a vacuum chamber 12, and regulated at the prescribed position. Then, the chamber 12 is exhausted, the substrate 11 is heated to remove surface absorption gas, and the entire surface is cleaned by sputtering with Ar ion gas. Then, raw gas 13 is fed to the chamber 12, and the substrate 11 is emitted by an entire surface emitting system. An InP buffer layer 11a produced from the gas 13 without surface contamination is formed on the entire substrate 11 by this operation. Then, the layer 11a is emitted by an interference pattern system. In this case, the pitch of an interference moire 14 is set to the prescribed value. This operation is repeated to form by epitaxially growing the desired corrugated lattice 5a made of InP on the layer 11a. The thus formed lattice 5a has a lattice pitch of the interference moire 14 and a sectional shape of sinusoidal wave shape.
其他摘要	目的：通过在真空室中设置基板，选择性地生产精细结构，并通过基板的热量选择性地从原料气体产生物质，并在基板上发射光学干涉图案。基材。组成：基板11设置在真空室12中，并在规定的位置调节。然后，使腔室12耗尽，加热基板11以去除表面吸收气体，并且通过用Ar离子气体溅射来清洁整个表面。然后，将原料气13送入腔室12，并通过整个表面发射系统发射基板11。通过该操作在整个基板11上形成由气体13产生的没有表面污染的InP缓冲层11a。然后，通过干涉图案系统发射层11a。在这种情况下，干涉莫尔14的间距被设定为规定值。通过在层11a上外延生长由InP制成的所需波纹状晶格5a，重复该操作。这样形成的格子5a具有干涉莫尔条纹14的格子间距和正弦波形的截面形状。
主权项	-
申请日期	1985-07-18
专利号	JP1987018709A
专利状态	失效
申请号	JP1985159091
公开（公告）号	JP1987018709A
IPC 分类号	H01L21/205 \| H01L21/263 \| H01L21/31 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67406
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	YAMAGUCHI AKIO. Photovolatically growing method. JP1987018709A[P]. 1987-01-27.

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