Semiconductor light emitting device and usage thereof

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	Semiconductor light emitting device and usage thereof
其他题名	Semiconductor light emitting device and usage thereof
	KURUMADA KATSUHIKO; SEKI SHUNJI; TSUZUKI NOBUYORI; TAMAMURA TOSHIAKI; NAKANO JUNICHI
	1990-10-17
专利权人	NIPPON TELEGR & TELEPH CORP
公开日期	1990-10-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce a leakage current flowing through a buried region to obtain high output by effectively making junction to be formed of a current block layer and a current confinement layer into a reverse bias state. CONSTITUTION:A p-type lower part clad layer 2, an active layer 3, an n-type upper part clad layer 4, an n-type cap layer 5, an n-type current block layer 6 and a p-type current confinement layer 7 are provided on a p-type substrate Then, luminous operation is performed by a bias to be impressed between the first and second electrodes 15a and 16, while a third electrode 15a connecting to a p-type region 7 forming the n1-p2 in the n1p2n3p lamination of a course reaching a lower part layer 2 from a cap region 5 through the buried regions 7 and 6 through the ohmic property or the Schottky barrier property and a fourth electrode 15b connecting to an n-type region 6 forming the n3p junction through the ohmic property or the Schottky barrier property are arranged. Thereby, a leakage current is reduced while improving output.
其他摘要	用途：通过有效地使由电流阻挡层和电流限制层形成的结形成反向偏置状态，减少流过掩埋区域的漏电流以获得高输出。组成：p型下部包层2，有源层3，n型上部包层4，n型盖层5，n型电流阻挡层6和p型电流限制在p型衬底1上提供层7.然后，通过在第一和第二电极15a和16之间施加的偏压进行发光操作，同时连接到形成n1的p型区7的第三电极15a。 -p2在n1p2n3p层叠过程中，从帽区5通过掩埋区7和6到达下部层2通过欧姆特性或肖特基势垒特性和连接到n型区6的第四电极15b形成通过欧姆特性或肖特基势垒特性排列n3p结。由此，在提高输出的同时减小漏电流。
主权项	-
申请日期	1989-07-19
专利号	JP1990256287A
专利状态	失效
申请号	JP1989184800
公开（公告）号	JP1990256287A
IPC 分类号	H01L33/14 \| H01L33/20 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01S5/042 \| H01S5/227 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67400
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	KURUMADA KATSUHIKO,SEKI SHUNJI,TSUZUKI NOBUYORI,et al. Semiconductor light emitting device and usage thereof. JP1990256287A[P]. 1990-10-17.

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