Semiconductor photo detecting device and semiconductor optical modulation device

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	Semiconductor photo detecting device and semiconductor optical modulation device
其他题名	Semiconductor photo detecting device and semiconductor optical modulation device
	KONO KENJI; WAKITA KOICHI
	1991-07-11
专利权人	NIPPON TELEGR & TELEPH CORP
公开日期	1991-07-11
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve external quantum efficiency by constituting a semiconductor photo detecting device by using an optical amplifier part and a photo detecting part formed on the same substrate. CONSTITUTION:On a semiconductor substrate 1, the following are formed; a semiconductor layer 3 as a clad layer, a semiconductor layer 4 as an optical guide layer, a semiconductor layer 5 having a quantum well or multilayer quantum well structure, a semiconductor layer 7 as an optical guide layer, a semiconductor layer 8 as a clad layer, and a semiconductor layer 9 as a cap layer. In this case, a diffraction grating is formed as follows; a flat interface 10R is formed on one-half part between the layer 7 and the layer 8, and an interface 10A where protrusions and recesses are repeated is formed on the other one-half part. A laminated body having the layer 8 and the layer 9 is isolated into a laminated body 11A and a laminated body 12R by an insulating layer 12. An optical amplifier part A to which a light L is inputted from the outside is constituted in a region under the laminated body 11A. A photo detecting part R to which the light from the amplifier part A is inputted is constituted in the region under the laminated body 11R.
其他摘要	用途：通过使用形成在同一基板上的光学放大器部件和光电检测部件构成半导体光电检测器件来提高外部量子效率。组成：在半导体衬底1上，形成以下内容;作为包层的半导体层3，作为光导层的半导体层4，具有量子阱或多层量子阱结构的半导体层5，作为光导层的半导体层7，作为包层的半导体层8层和作为盖层的半导体层9。在这种情况下，衍射光栅如下形成;平面界面10R形成在层7和层8之间的一半部分上，并且在另一半部分上形成有重复凸起和凹陷的界面10A。具有层8和层9的层叠体通过绝缘层12被隔离成层叠体11A和层叠体12R。从外部输入光L的光学放大器部分A构成在下面的区域中。层叠体11A。输入来自放大器部分A的光的光检测部分R构成在层叠体11R下方的区域中。
主权项	-
申请日期	1989-11-20
专利号	JP1991161980A
专利状态	失效
申请号	JP1989301772
公开（公告）号	JP1991161980A
IPC 分类号	G02F1/35 \| G02F1/025 \| H01L31/10 \| H01L33/06 \| H01L33/08 \| H01L33/10 \| H01L33/22 \| H01S5/00 \| H01S5/026 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67398
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	KONO KENJI,WAKITA KOICHI. Semiconductor photo detecting device and semiconductor optical modulation device. JP1991161980A[P]. 1991-07-11.

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