Semiconductor laser with external cavity

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	Semiconductor laser with external cavity
其他题名	Semiconductor laser with external cavity
	CHIKAMA TERUMI; KIYONAGA TETSUYA; ONODA YOSHITO
	1989-01-26
专利权人	FUJITSU LTD
公开日期	1989-01-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable control of a mode hopping caused by the change of a bias current of a semiconductor laser by a method wherein a medium variable in a refractive index is interposed between the semiconductor laser and a reflective mirror, to change the refractive index and the light fed back is controlled to keep the phase constant. CONSTITUTION:A semiconductor laser 11, a medium 13 variable in a refractive index, and a reflective mirror 12 are disposed in this sequence in a direction of optical axis. The refractive index variable medium 13 is, for instance, composed of a planar electrode installed on a three-dimensional waveguide path. A modulation control circuit 14 controls a bias current of the semiconductor laser 11 dependently on the electric signal inputted from a terminal 16. Thereby, the frequency of an oscillating laser ray is modulated corresponding to the inputted electric signal. A phase compensation circuit 15 detects the change of the bias current of the semiconductor laser 11 in the modulation control circuit 14 so as to regulate the voltage impressed on the refractive index variable medium 13 correspondently to the detected value, so that the fed back from the reflective mirror 12 is kept constant in phase.
其他摘要	用途：通过在半导体激光器和反射镜之间插入折射率可变的介质的方法，能够控制由半导体激光器的偏置电流的变化引起的模式跳变，以改变折射率和控制光反馈以保持相位恒定。组成：半导体激光器11，折射率可变的介质13和反射镜12按顺序设置在光轴方向上。折射率可变介质13例如由安装在三维波导路径上的平面电极构成。调制控制电路14根据从端子16输入的电信号控制半导体激光器11的偏置电流。由此，对应于输入的电信号调制振荡激光的频率。相位补偿电路15检测调制控制电路14中的半导体激光器11的偏置电流的变化，以便相应于检测值调节施加在折射率可变介质13上的电压，从而从反射镜12保持相位恒定。
主权项	-
申请日期	1987-07-20
专利号	JP1989024485A
专利状态	失效
申请号	JP1987180538
公开（公告）号	JP1989024485A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67290
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	CHIKAMA TERUMI,KIYONAGA TETSUYA,ONODA YOSHITO. Semiconductor laser with external cavity. JP1989024485A[P]. 1989-01-26.