Manufacture of single axial mode laser

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	Manufacture of single axial mode laser
其他题名	Manufacture of single axial mode laser
	ISHINO MASATO; SASAI YOICHI; KUBO MINORU
	1988-05-23
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1988-05-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce the deformation of a diffraction grating by melting back and to enable preserving the deep diffraction grating by liquid phase epitaxy in a state that the surface on which the diffraction grating is formed is partially covered. CONSTITUTION:In the case of an InGaAsP/InP system DFB-LD, a diffraction grating 7 is formed on the surface of an optical waveguide layer 4 after an n-InP buffer layer 2, an InGaAsP active layer 3 and an InGaAsP optical waveguide layer 4 are grown by LPE on an n-InP substrate An SiO2 film 8 is deposited on the diffraction grating 7 for covering the grating by leaving a stripe W wide in the direction perpendicular to the pattern of the diffraction grating. A p-InP is grown by LPE on the diffraction grating on which the SiO2 film 8 is partially formed. A solute on the SiO2 film 8 is concentrated in the aperture 11 of the SiO2 film 8 as shown by an arrow 10 by the existence of the SiO2 film 8 and the melting back of the exposed diffraction grating can be restrained by the effective increase of the supersaturation in the aperture.
其他摘要	目的：通过熔化来减少衍射光栅的变形，并且能够在形成衍射光栅的表面被部分覆盖的状态下通过液相外延保留深衍射光栅。组成：在InGaAsP / InP系统DFB-LD的情况下，在n + - InP缓冲层2，InGaAsP有源层3和InGaAsP之后，在光波导层4的表面上形成衍射光栅7。通过LPE在n + -InP衬底1上生长光波导层4.在衍射光栅7上沉积SiO2膜8，通过在垂直于衍射图案的方向上留下宽条带W来覆盖光栅光栅。通过LPE在衍射光栅上生长p-InP，在衍射光栅上部分地形成SiO2膜8。如箭头10所示，SiO 2膜8上的溶质通过SiO 2膜8的存在而集中在SiO 2膜8的孔11中，并且可以通过有效增加来抑制暴露的衍射光栅的熔化。孔径中的过饱和度。
主权项	-
申请日期	1986-11-06
专利号	JP1988119283A
专利状态	失效
申请号	JP1986264551
公开（公告）号	JP1988119283A
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67269
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ISHINO MASATO,SASAI YOICHI,KUBO MINORU. Manufacture of single axial mode laser. JP1988119283A[P]. 1988-05-23.

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