Semiconductor light emission element and driving of same

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	Semiconductor light emission element and driving of same
其他题名	Semiconductor light emission element and driving of same
	TAKADA KAZUMASA; NODA JUICHI; OKAMOTO KATSUNARI
	1987-02-24
专利权人	NIPPON TELEGR & TELEPH CORP
公开日期	1987-02-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain incoherent light emission with high luminance by a method wherein the length of a resonator is extended and an electrode is provided on a part of an emission end and the phases of vertical modes are varied by the temperature variation of an activation layer created by the application of a predetermined pulse current. CONSTITUTION:P-type InP epitaxial layers 2 and 4, an In(x)Ga(1-x)As(y)P(1-y) activation layer 5 and an In(x')Ga(1-x')As(y')P(1-y') cap layer are laminated on a P-type InP substrate 1 and a negative electrode 8 is partially provided on the side of an oscillation surface. The length of a resonator is so determined as to be 2-3 times of the optimal resonator length at which the threshold current is lowest. A pulse current I with a pulse width DELTAt and a pulse interval to (wherein DELTAt/to<0.1) is injected through the electrodes 9 and 8 to vary the temperature T of an activation layer. As the length of the resonator is long, the light intensity of a basic vertical mode is reduced and the number of vertical modes is increased. As non-emission range is large,a threshold current becomes large. Moreover, as the interval DELTAlambda of the modes becomes small, shifts of the vertical modes and phase variations of respective modes are induced and spectra become continuous to produce an output light with low coherency so that intensity of the light inputted into a single mode optical fiber can be increased.
其他摘要	目的：通过一种方法获得高亮度的非相干光发射，其中谐振器的长度延长，电极设置在发射端的一部分上，垂直模式的相位随着激活层的温度变化而变化通过施加预定的脉冲电流。组成：P型InP外延层2和4，In（x）Ga（1-x）As（y）P（1-y）激活层5和In（x'）Ga（1-x'）由于（y'）P（1-y'）盖层层叠在P型InP衬底1上，负极8部分地设置在振荡表面侧。谐振器的长度被确定为阈值电流最低的最佳谐振器长度的2-3倍。通过电极9和8注入脉冲宽度为DELTAt且脉冲间隔为（其中Δt0/至<0.1）的脉冲电流I，以改变激活层的温度T.随着谐振器的长度变长，基本垂直模式的光强度减小并且垂直模式的数量增加。由于非发射范围大，阈值电流变大。此外，随着模式的间隔ΔR变小，引起垂直模式的偏移和各模式的相位变化，并且光谱变得连续以产生具有低相干性的输出光，使得输入到单模光纤的光的强度可以增加。
主权项	-
申请日期	1985-08-20
专利号	JP1987042586A
专利状态	失效
申请号	JP1985181047
公开（公告）号	JP1987042586A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/096 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67173
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	TAKADA KAZUMASA,NODA JUICHI,OKAMOTO KATSUNARI. Semiconductor light emission element and driving of same. JP1987042586A[P]. 1987-02-24.

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