Semiconductor laser device with a plurality of active layers

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	Semiconductor laser device with a plurality of active layers
其他题名	Semiconductor laser device with a plurality of active layers
	SUZUKI KATSUHIRO; YAJIMA HIROYOSHI; SHIMADA JUNICHI; SHIMOYAMA KENJI; GOTO HIDEKI
	1990-06-04
专利权人	AGENCY OF IND SCIENCE & TECHNOL
公开日期	1990-06-04
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable large area light emission by dividing the active layer into small parts so that a plurality of layers are provided, with area per layer being the same as in the past, and making the total thickness of the active layers larger. CONSTITUTION:A semi-insulating AlGaAs clad layer 125 is formed on a substrate 127, and active layers 119, 121, 123 sandwiched between P-type clad layers 111, 115 and N-type clad layers 113, 117 are further laminated thereon. A semi-insulating AlGaAs clad layer 109 is formed on these layers 119, 121, 123, and a P-type clad layer 105 and an N-type clad layer 107 are buried and formed on the left and right sides thereof, and electrodes 101, 103 are formed on the P-type clad layer 105 and the N-type clad layer 107. In this construction, when a current is caused to flow between the (+) electrode 101 and the (-) electrode 103, positive holes and electrons are injected into respective active layers with small energy band gap from the upper and lower clad layers and right and left clad layers. Accordingly, electrons and positive holes are injected into the respective active layers over a wide area. Thus, high carrier density per active layer can be maintained and large area light emission is possible without lowering the light emission efficiency.
其他摘要	目的：通过将有源层分成小部分来实现大面积发光，从而提供多个层，每层的面积与过去相同，并使有源层的总厚度更大。组成：在基板127上形成半绝缘AlGaAs包层125，并在其上进一步层叠夹在P型包层111,115和N型包层113,117之间的有源层119,121,123。在这些层119,121,123上形成半绝缘的AlGaAs包层109，并且在其左侧和右侧掩埋并形成P型覆层105和N型覆层107，以及电极101在P型覆盖层105和N型覆盖层107上形成103，在这种结构中，当使电流在（+）电极101和（ - ）电极103之间流动时，正孔和将电子注入到各自的有源层中，其具有来自上包层和下包层以及左右包层的小能带隙。因此，电子和空穴在宽的区域上注入到各个有源层中。因此，可以保持每个有源层的高载流子密度，并且可以在不降低发光效率的情况下进行大面积发光。
主权项	-
申请日期	1988-11-25
专利号	JP1990144983A
专利状态	失效
申请号	JP1988299357
公开（公告）号	JP1990144983A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67082
专题	半导体激光器专利数据库
作者单位	AGENCY OF IND SCIENCE & TECHNOL
推荐引用方式 GB/T 7714	SUZUKI KATSUHIRO,YAJIMA HIROYOSHI,SHIMADA JUNICHI,et al. Semiconductor laser device with a plurality of active layers. JP1990144983A[P]. 1990-06-04.

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