VCSEL with antiguide current confinement layer

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	VCSEL with antiguide current confinement layer
其他题名	VCSEL with antiguide current confinement layer
	HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER; ZHENG, JUN
	2003-10-02
专利权人	APPLIED OPTOELECTRONICS, INC.
公开日期	2003-10-02
授权国家	美国
专利类型	发明申请
摘要	A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.
其他摘要	用于产生激光波长的单横模激光的表面发射激光器，例如VCSEL，具有第一反射镜和第二反射镜，其定位在其间限定激光腔，并且半导体有源区设置在激光腔之间。第一和第二反射镜，用于通过受激发射放大激光腔中激光波长的光。环形抗导结构设置在激光腔内并位于有源区与第一和第二镜之一之间，环形抗导结构包括抗导材料并具有中心开口，中心开口包括具有折射率的第二材料对于激光波长小于抗导材料的激光波长的光，由此环形抗导结构引起激光腔中高阶横向激光模式的优先反导。
主权项	-
申请日期	2002-03-28
专利号	US20030185267A1
专利状态	授权
申请号	US10/109288
公开（公告）号	US20030185267A1
IPC 分类号	H01S5/183 \| H01S5/20 \| H01S5/22 \| H01S3/08
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66710
专题	半导体激光器专利数据库
作者单位	APPLIED OPTOELECTRONICS, INC.
推荐引用方式 GB/T 7714	HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER,ZHENG, JUN. VCSEL with antiguide current confinement layer. US20030185267A1[P]. 2003-10-02.