Xi'an Institute of Optics and Precision Mechanics,CAS
High output power semiconductor laser | |
其他题名 | High output power semiconductor laser |
HORIUCHI SHIGEKI; KOKUBO YOSHIHIRO; OOTAKI KANAME; KUMABE HISAO; TAKAMIYA SABUROU | |
1984-03-27 | |
专利权人 | MITSUBISHI DENKI KK |
公开日期 | 1984-03-27 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To improve the heat dissipating property and enable to array multiple active regions at narrow interval by a method wherein the band width where Zn is selectively diffused is made narrower without providing P and N electrodes on the same surface while eliminating a groove produced by means of mesa etching. CONSTITUTION:An N type AlyGa1-yAs clad layer 102, an N type AlxGa1-xAs active layer 103, an N type AlyGa1-yAs clad layer 104, a P type AlyGa1-y layer 105 and an N type GaAs contact layer 106 are successivel formed on an N type GaAs substrate 10 Next Zn is selectively diffused in the three band- shaped parts extending from the surface of the contact layer 106 to a pair of resonator ends 110 slenderly in the vertical direction ending slightly inside the both ends 110 to be heat-treated forming each Zn diffused P regions 108 and each Zn drive P regions 109. The diffused front of the Zn drive P regions 109 is controlled to reach the clad layer 102 but not to reach the substrate 10 Then a P electrode 111 and an N electrode 112 are respectively formed on the surface of the contact layer 106 and on the backside surface of the substrate 10 |
其他摘要 | 目的:改善散热性能,并通过一种方法,以窄间隔排列多个有源区域,其中Zn选择性地扩散的带宽变窄,而不在同一表面上提供P和N电极同时消除由手段产生的沟槽台面蚀刻组成:N型AlyGa1-yAs包层102,N型AlxGa1-xAs有源层103,N型AlyGa1-yAs包层104,P型AlyGa1-y层105和N型GaAs接触层106是连续的接着,Zn在从接触层106的表面延伸的三个带状部分中选择性地扩散到在垂直方向上细长的一对谐振器端部110,所述一对谐振器端部110在两端110的内侧稍微终止。热处理形成每个Zn扩散的P +区108和每个Zn驱动P区109.控制Zn驱动P区109的扩散前沿以到达包层102但不到达基板101。 P电极111和N电极112分别形成在接触层106的表面上和基板101的背侧表面上。 |
主权项 | - |
申请日期 | 1982-09-18 |
专利号 | JP1984052892A |
专利状态 | 失效 |
申请号 | JP1982163704 |
公开(公告)号 | JP1984052892A |
IPC 分类号 | H01S5/00 | H01S5/40 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/66250 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KK |
推荐引用方式 GB/T 7714 | HORIUCHI SHIGEKI,KOKUBO YOSHIHIRO,OOTAKI KANAME,et al. High output power semiconductor laser. JP1984052892A[P]. 1984-03-27. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1984052892A.PDF(212KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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