Self-sustained pulsating laser diode

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	Self-sustained pulsating laser diode
其他题名	Self-sustained pulsating laser diode
	OHYA, MASAKI; FUJII, HIROAKI; ENDO, KENJI
	2001-11-22
专利权人	NEC ELECTRONICS CORPORATION
公开日期	2001-11-22
授权国家	美国
专利类型	发明申请
摘要	A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1x1017 cm-3 and no greater than 5x1017 cm-3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.
其他摘要	自激式脉动激光二极管，其中有源层中的区域用作可饱和吸收体，具有至少五个且不超过十个量子阱，p型包层平坦部分，层厚度至少为300nm且无大于500nm，p型包层平坦部分，载流子密度至少为1×1017cm-3且不大于5×1017cm-3。与横向上的光分布相比，该激光二极管实现了足够小的电流分布，从而能够实现稳定的自持脉动操作直到高温，这在过去是难以实现的。
主权项	A self-sustained pulsating laser diode which having a double-heterostructure minimally comprising: a cladding layer of a first conductivity type; a multi-quantum well active layer; and a cladding layer of a second conductivity type each being arranged on a semiconductor substrate of the first conductivity type, wherein the number of said quantum wells being at least 5 and no greater than 10; and said layer thickness of a flat part of said cladding layer having a current blocking structure is at least 300 nm and no greater than 500 nm; and further wherein a carrier density in said flat part of the cladding layer having a current blocking structure is at least times.10.sup.17 cm.sup.-3 and no greater than 5.times.10.sup.17 cm.sup.-3.
申请日期	2001-03-28
专利号	US20010043632A1
专利状态	授权
申请号	US09/819969
公开（公告）号	US20010043632A1
IPC 分类号	H01S5/065 \| H01S5/22 \| H01S5/223 \| H01S5/343 \| H01S5/00 \| H01S3/14
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66212
专题	半导体激光器专利数据库
作者单位	NEC ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	OHYA, MASAKI,FUJII, HIROAKI,ENDO, KENJI. Self-sustained pulsating laser diode. US20010043632A1[P]. 2001-11-22.