Xi'an Institute of Optics and Precision Mechanics,CAS
Self-sustained pulsating laser diode | |
其他题名 | Self-sustained pulsating laser diode |
OHYA, MASAKI; FUJII, HIROAKI; ENDO, KENJI | |
2001-11-22 | |
专利权人 | NEC ELECTRONICS CORPORATION |
公开日期 | 2001-11-22 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1x1017 cm-3 and no greater than 5x1017 cm-3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past. |
其他摘要 | 自激式脉动激光二极管,其中有源层中的区域用作可饱和吸收体,具有至少五个且不超过十个量子阱,p型包层平坦部分,层厚度至少为300nm且无大于500nm,p型包层平坦部分,载流子密度至少为1×1017cm-3且不大于5×1017cm-3。与横向上的光分布相比,该激光二极管实现了足够小的电流分布,从而能够实现稳定的自持脉动操作直到高温,这在过去是难以实现的。 |
主权项 | A self-sustained pulsating laser diode which having a double-heterostructure minimally comprising: a cladding layer of a first conductivity type; a multi-quantum well active layer; and a cladding layer of a second conductivity type each being arranged on a semiconductor substrate of the first conductivity type, wherein the number of said quantum wells being at least 5 and no greater than 10; and said layer thickness of a flat part of said cladding layer having a current blocking structure is at least 300 nm and no greater than 500 nm; and further wherein a carrier density in said flat part of the cladding layer having a current blocking structure is at least times.10.sup.17 cm.sup.-3 and no greater than 5.times.10.sup.17 cm.sup.-3. |
申请日期 | 2001-03-28 |
专利号 | US20010043632A1 |
专利状态 | 授权 |
申请号 | US09/819969 |
公开(公告)号 | US20010043632A1 |
IPC 分类号 | H01S5/065 | H01S5/22 | H01S5/223 | H01S5/343 | H01S5/00 | H01S3/14 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/66212 |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC ELECTRONICS CORPORATION |
推荐引用方式 GB/T 7714 | OHYA, MASAKI,FUJII, HIROAKI,ENDO, KENJI. Self-sustained pulsating laser diode. US20010043632A1[P]. 2001-11-22. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论