Double-hetero structure semiconductor laser with device

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	Double-hetero structure semiconductor laser with device
其他题名	Double-hetero structure semiconductor laser with device
	ONO YUICHI; YAMASHITA SHIGEO; YOSHIZAWA MISUZU; NAKATSUKA SHINICHI; KAJIMURA TAKASHI; OISHI AKIO; TANAKA TOSHIAKI; KONO TOSHIHIRO; KANEKO TADAO
	1989-07-05
专利权人	HITACHI LTD
公开日期	1989-07-05
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device high in output power and reliability easily by a method wherein an optical coupling layer which propagates laser rays is provided to at least one of end face sections in a laser resonator and an active layer is formed so as to be situated at a position where it is optically coupled with the optical coupling layer through the intermediary of a clad layer. CONSTITUTION:A protrudent or a recessed stripe is previously formed on a semiconductor substrate, and a dual double-hetero structure is formed of an optical coupling layer sandwiched in between first clad layers, a laser active layer, and a second clad layer, and the height a of a substrate step is made to be nearly equal to the thickness C between the optical coupling layer and the laser active layer. That is, the laser active layer is made to disappear near an end face through the step so as to be coupled with the optical coupling layer through the intermediary of the clad layer or a transparent section. By these processes, a laser device of this design can be remarkably improved in an optical output breakage limiting value without degrading laser rays in property while a high power is outputted, and as the etching processing of a substrate and a crystal growth can be controlled in thickness, the device can be comparatively easily formed.
其他摘要	目的：通过一种方法，容易地获得输出功率和可靠性高的半导体激光器件，其中向激光谐振器中的至少一个端面部分提供传播激光射线的光学耦合层，并形成有源层，以便位于通过包层中间与光学耦合层光学耦合的位置。组成：预先在半导体衬底上形成凸起或凹陷的条纹，并且双重双异质结构由夹在第一覆层，激光有源层和第二覆层之间的光学耦合层形成，并且使基板台阶的高度a几乎等于光学耦合层和激光活性层之间的厚度C.也就是说，通过台阶使激光活性层在端面附近消失，从而通过包层或透明部分的中间层与光学耦合层耦合。通过这些工艺，这种设计的激光器件可以在输出高功率的同时显着改善光输出断裂限制值而不降低激光射线性能，并且可以控制基板的蚀刻处理和晶体生长。厚度，装置可以比较容易地形成。
主权项	-
申请日期	1987-12-25
专利号	JP1989170082A
专利状态	失效
申请号	JP1987327154
公开（公告）号	JP1989170082A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66157
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	ONO YUICHI,YAMASHITA SHIGEO,YOSHIZAWA MISUZU,et al. Double-hetero structure semiconductor laser with device. JP1989170082A[P]. 1989-07-05.

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