Semiconductor laser manufacture

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	Semiconductor laser manufacture
其他题名	Semiconductor laser manufacture
	GEORGE BLAIR SCOTT
	1983-05-25
专利权人	PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED
公开日期	1983-05-25
授权国家	英国
专利类型	发明申请
摘要	A semiconductor laser which can sustain a high optical power density emission without suffering catastrophic optical damage of the reflective facets adopts the so-called "window structure" i.e. with the active material layer (4) spaced from the reflective facets. To make the laser a first cladding layer (3) is provided on a semiconductor substrate (1) of the same conductivity type. The active region is then grown by molecular beam epitaxy as a discrete island (4) after which a second cladding layer (5) is provided on the upper surface of the semiconductor body to envelope the active region (4). The laser can be completed by providing metallized contacts (6,7). Both cladding layers may also be formed by molecular beam epitaxy.
其他摘要	能够维持高光功率密度发射而不遭受反射面的灾难性光学损伤的半导体激光器采用所谓的“窗口结构”，即活性材料层（4）与反射面间隔开。为了制造激光器，在相同导电类型的半导体衬底（1）上提供第一包层（3）。然后通过分子束外延生长有源区作为离散岛（4），之后在半导体本体的上表面上提供第二包层（5）以包围有源区（4）。可以通过提供金属化触点（6,7）来完成激光。两个包层也可以通过分子束外延形成。
主权项	A method of manufacturing a semiconductor laser comprising a semiconductor body having an active region between two cladding layers, the material of each cladding layer having a larger bandgap than the material of the active region, which method includes the steps of providing the first cladding layer on a semiconductor substrate, the first layer having the same conductivity type as the substrate, providing the second cladding layer on the first layer, and providing the active region between said first and second cladding layers, said active region having the opposite conductivity type to one or other of the cladding layers, characterized in that the active region is grown by molecular beam epitaxy as a discrete island on the first cladding layer before providing the second cladding layer on the island and on exposed parts of the first cladding layer so that the island is enveloped by said cladding layers.
申请日期	1981-10-26
专利号	GB2109155A
专利状态	失效
申请号	GB1981032182
公开（公告）号	GB2109155A
IPC 分类号	H01S5/16 \| H01S5/00 \| H01S5/227 \| H01L33/00 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66156
专题	半导体激光器专利数据库
作者单位	PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED
推荐引用方式 GB/T 7714	GEORGE BLAIR SCOTT. Semiconductor laser manufacture. GB2109155A[P]. 1983-05-25.

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