Xi'an Institute of Optics and Precision Mechanics,CAS
Bandgap engineering | |
其他题名 | Bandgap engineering |
LAM, YEE, LOY; CHAN, YUEN, CHUEN | |
2004-11-04 | |
专利权人 | DENSELIGHT SEMICONDUCTORS PTE LTD |
公开日期 | 2004-11-04 |
授权国家 | 世界知识产权组织 |
专利类型 | 发明申请 |
摘要 | A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity. |
其他摘要 | 一种通过再生和量子阱混合过程的组合,在晶片级规模上实现大的局部带隙能量差异的方法,具有精细的带隙控制。该技术允许在晶片上制造光子集成电路,其中在不同的区域上形成不同成分的外延层,以优化在不同中心波长处的相关能带隙。包含量子阱的结构的那些部分的量子阱混合允许带隙的局部微调,以校正沉积或生长期间的不准确性,或者有意地使带隙失谐以实现某些功能,例如更大的透明度或响应度。 |
主权项 | A method of fabricating a photonic integrated circuit on a wafer comprising the steps of: forming a base structure having a layer with a first bandgap energy, at least a portion of the base structure including a quantum well; removing regions of the base structure by photolithography, masking and etching; performing regrowth in said regions to form material with a second bandgap energy, at least a portion of said regions including a quantum well; and, performing quantum well intermixing on portions of the wafer to tune the local bandgap energy. |
申请日期 | 2004-04-23 |
专利号 | WO2004095662A2 |
专利状态 | 未确认 |
申请号 | PCT/GB2004/001727 |
公开(公告)号 | WO2004095662A2 |
IPC 分类号 | H01S5/00 | H01S5/323 | H01S5/34 | H01S5/40 | H01L21/18 | H01S5/343 | H01S5/026 | G02F1/017 |
专利代理人 | GILL JENNINGS & EVERY |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/65990 |
专题 | 半导体激光器专利数据库 |
作者单位 | DENSELIGHT SEMICONDUCTORS PTE LTD |
推荐引用方式 GB/T 7714 | LAM, YEE, LOY,CHAN, YUEN, CHUEN. Bandgap engineering. WO2004095662A2[P]. 2004-11-04. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
WO2004095662A2.PDF(493KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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