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Bandgap engineering
其他题名Bandgap engineering
LAM, YEE, LOY; CHAN, YUEN, CHUEN
2004-11-04
专利权人DENSELIGHT SEMICONDUCTORS PTE LTD
公开日期2004-11-04
授权国家世界知识产权组织
专利类型发明申请
摘要A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity.
其他摘要一种通过再生和量子阱混合过程的组合,在晶片级规模上实现大的局部带隙能量差异的方法,具有精细的带隙控制。该技术允许在晶片上制造光子集成电路,其中在不同的区域上形成不同成分的外延层,以优化在不同中心波长处的相关能带隙。包含量子阱的结构的那些部分的量子阱混合允许带隙的局部微调,以校正沉积或生长期间的不准确性,或者有意地使带隙失谐以实现某些功能,例如更大的透明度或响应度。
主权项A method of fabricating a photonic integrated circuit on a wafer comprising the steps of: forming a base structure having a layer with a first bandgap energy, at least a portion of the base structure including a quantum well; removing regions of the base structure by photolithography, masking and etching; performing regrowth in said regions to form material with a second bandgap energy, at least a portion of said regions including a quantum well; and, performing quantum well intermixing on portions of the wafer to tune the local bandgap energy.
申请日期2004-04-23
专利号WO2004095662A2
专利状态未确认
申请号PCT/GB2004/001727
公开(公告)号WO2004095662A2
IPC 分类号H01S5/00 | H01S5/323 | H01S5/34 | H01S5/40 | H01L21/18 | H01S5/343 | H01S5/026 | G02F1/017
专利代理人GILL JENNINGS & EVERY
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/65990
专题半导体激光器专利数据库
作者单位DENSELIGHT SEMICONDUCTORS PTE LTD
推荐引用方式
GB/T 7714
LAM, YEE, LOY,CHAN, YUEN, CHUEN. Bandgap engineering. WO2004095662A2[P]. 2004-11-04.
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