Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor optical waveguide element | |
其他题名 | Semiconductor optical waveguide element |
EHATA TOSHIKI; SASAYA YUKIHIRO; NISHIWAKI YOSHIKAZU; MATSUOKA HARUJI | |
1982-11-02 | |
专利权人 | SUMITOMO DENKI KOGYO KK |
公开日期 | 1982-11-02 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To enable monolithic structure with every kind of semiconductor elements by forming plane multilayer structure formed by combining a high carrier concentration layer and a low carrier concentration layer, and a layer functioning as a waveguide layer. CONSTITUTION:Buffer layers 22 and waveguide layers 23 consists of N-AlY Ga1-YAs and N-AlXGa1-XAs of low carrier concentration (1-50X10cm), and substrates 24 in a figure a are obtained by growing N-AlZGa1-ZAs of high carrier concentration (1-50X10cm), to which Sn, Te, Se, Pb, etc. are doped, onto GaAs crystal substrates 25 of high carrier concentration in epitaxial shape. However, when Al concentration X, Y, Z(0<=X<1, 0 |
其他摘要 | 目的:通过形成通过组合高载流子浓度层和低载流子浓度层形成的平面多层结构,以及用作波导层的层,实现与各种半导体元件的单片结构。组成:缓冲层22和波导层23由低载流子浓度(1-50×10 15 cm -3)的N-AlY Ga1-YAs和N-AlXGa1-XAs组成,并获得图a中的基板24通过将掺杂有Sn,Te,Se,Pb等的高载流子浓度(1-50×10 17 cm -3)的N + -AlZGa1-ZAs生长到高的GaAs晶体衬底25上外延形状的载流子浓度。然而,当Al浓度X,Y,Z(0 <= X <1,0 |
主权项 | - |
申请日期 | 1981-04-27 |
专利号 | JP1982178397A |
专利状态 | 失效 |
申请号 | JP1981064897 |
公开(公告)号 | JP1982178397A |
IPC 分类号 | G02B6/122 | H01L27/15 | H01S5/00 | H01S5/10 | G02B5/172 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/65968 |
专题 | 半导体激光器专利数据库 |
作者单位 | SUMITOMO DENKI KOGYO KK |
推荐引用方式 GB/T 7714 | EHATA TOSHIKI,SASAYA YUKIHIRO,NISHIWAKI YOSHIKAZU,et al. Semiconductor optical waveguide element. JP1982178397A[P]. 1982-11-02. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1982178397A.PDF(107KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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