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Light emitting element having active waveguide and manufacture thereof
其他题名Light emitting element having active waveguide and manufacture thereof
KURATA KAZUHIRO; SANO AKIZUMI; SUZUKI RYOJI; NAKAJO NAOKI; IKEGAMI HISAYA
1991-06-06
专利权人HITACHI CABLE LTD
公开日期1991-06-06
授权国家日本
专利类型发明申请
摘要PURPOSE:To obtain a light emitting element having an active waveguide excellent in linearity, by forming a mesa stripe on a semiconductor substrate surface in the manner in which the top surface of a sectional shape constitutes a curved surface. CONSTITUTION:A photoresist mask 10 is arranged, as a mask, on the surface of a semiconductor substrate The substrate surface 1' is eliminated by photo etching, and a mesa stripe 1a having a trapezoidal section is formed. The photoresist film 10 is eliminated; the whole surface of the substrate 1 is chemically etched; thus the top surface part of the trapezoidal mesa stripe 1a is constituted as a curved surface. In this manner, the following are continuously epitaxially grown in order on the substrate 1; a current barrier layer 2 whose thickness does not exceed the height of the mesa stripe 1a, clad layers 3, 5 having a thickness which can sufficiently fill the top surface of the mesa stripe 1a, and an active layer 4. Thereby a light emitting element which has an active waveguide excellent is linearity and is excellent in light emitting characteristics can be obtained.
其他摘要目的:通过以截面形状的顶面构成曲面的方式在半导体衬底表面上形成台面条,获得具有线性优良的有源波导的发光元件。组成:光刻胶掩模10作为掩模设置在半导体衬底1的表面上。通过光刻蚀去除衬底表面1',并形成具有梯形截面的台面条1a。去除光致抗蚀剂膜10;基板1的整个表面被化学蚀刻;因此,梯形台面条1a的顶表面部分构成为曲面。以这种方式,在衬底1上依次连续地外延生长以下物质;厚度不超过台面条1a的高度的电流阻挡层2,具有能够充分填充台面条1a的顶面的厚度的包层3,5,以及有源层4.由此发光元件具有优异线性度的活性波导并且可以获得优异的发光特性。
主权项-
申请日期1989-10-19
专利号JP1991133190A
专利状态失效
申请号JP1989272544
公开(公告)号JP1991133190A
IPC 分类号H01L33/10 | H01L33/14 | H01L33/16 | H01L33/30 | H01L33/36 | H01S5/00 | H01L33/00 | H01S3/18
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/65958
专题半导体激光器专利数据库
作者单位HITACHI CABLE LTD
推荐引用方式
GB/T 7714
KURATA KAZUHIRO,SANO AKIZUMI,SUZUKI RYOJI,et al. Light emitting element having active waveguide and manufacture thereof. JP1991133190A[P]. 1991-06-06.
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