Single-axial mode semiconductor laser

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	Single-axial mode semiconductor laser
其他题名	Single-axial mode semiconductor laser
	YAMAGUCHI MASAYUKI
	1985-09-27
专利权人	NIPPON DENKI KK
公开日期	1985-09-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain the titled device which has the function of selection of the polarization plane and can oscillate one of TE waves or TM waves selectively on the mode of a piece of oscillation axis by a method wherein this device has a required thin quantum well layer in proximity to a grating of the distributed reflection region and the electrodes on the active region and the distributed reflection region are isolated from each other. CONSTITUTION:Semiconductor layers 13 and 110 made of non-doped InGaAsP are formed as an active layer 13 of 0.1mum thickness on the surface 111 of an N type substrate 11 where the grating 19 has not been formed, and as a quantum well layer 110 of 100Angstrom thickness on a photo guide layer 12, respectively. Two electrodes 16 and 17 thereof are isolated by a groove 18 more deeply than a contact layer 15 between the active region 111 and the distributed reflection region 112, and currents I1 and I2 can be separately injected to the regions 111 and 112, respectively. With this distributed reflection type single-axial mode semiconductor laser, the current I1 let flow in the region 111 acts as the excitation current contributed to laser oscillation, accordingly, TE waves and TM waves can be oscillated respectively on single axial modes in the neighborhood of Bragg wavelengths.
其他摘要	目的：获得具有选择偏振面功能的标题装置，并通过一种方法选择性地在一个振荡轴的模式下振荡TE波或TM波之一，其中该装置具有所需的薄量子阱层在分布反射区域的光栅附近，有源区域和分布反射区域上的电极彼此隔离。组成：由未掺杂的InGaAsP制成的半导体层13和110在N型衬底11的表面111上形成0.1μm厚的有源层13，其中光栅19尚未形成，并且作为量子阱层110在光导层12上分别具有100埃的厚度。其两个电极16和17通过比有源区111和分布反射区112之间的接触层15更深的槽18隔离，并且电流I1和I2可以分别分别注入区域111和112。利用这种分布式反射型单轴模式半导体激光器，区域111中的电流I1流动作为有助于激光振荡的激励电流，因此，TE波和TM波可以分别在单轴模式附近振荡。布拉格波长。
主权项	-
申请日期	1984-03-12
专利号	JP1985189981A
专利状态	失效
申请号	JP1984046906
公开（公告）号	JP1985189981A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/0625 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65861
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI. Single-axial mode semiconductor laser. JP1985189981A[P]. 1985-09-27.

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