Manufacture of surface-emitting type semiconductor laser device

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	Manufacture of surface-emitting type semiconductor laser device
其他题名	Manufacture of surface-emitting type semiconductor laser device
	ISHIKAWA TORU; IBARAKI AKIRA; FURUSAWA KOTARO
	1991-12-13
专利权人	科学技術振興事業団
公开日期	1991-12-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent pit flaws from being induced in a current block layer and a reactive current path from being formed so as to enable a semiconductor laser device to be lessened in threshold current and improved in uniformity by a method wherein a block layer of the same conductivity type is newly provided surrounding an active region. CONSTITUTION:An active region 5 is provided at the center of a substrate, and a first block layer 9 and a second block layer 10 different from each other in conductivity type are provided surrounding the active region 5. A pair of reflecting mirrors 3 and 13 is provided onto the substrate sandwiching the active region 5 and the block layers 9 and 10 between them to constitute a surface- emitting type semiconductor laser device. At this point, after the second block layer 10 is formed, a third block layer 11 of the same conductivity type with the second block layer is provided surrounding the active region 5. By this setup, pit flaws and thin-wall parts induced in the second block layer 10 are recovered by the third block layer 1 Therefore, a current block effect can be prevented from deteriorating due to a P-N reverse bias.
其他摘要	用途：防止在电流阻挡层中引入凹坑缺陷并形成无功电流路径，以使半导体激光器件的阈值电流减小，并通过其中阻挡层的方法改善均匀性在有源区周围新设置导电类型。组成：有源区5设置在基板的中心，并且围绕有源区5提供导电类型彼此不同的第一阻挡层9和第二阻挡层10.一对反射镜3和13在衬底上提供有源区5和阻挡层9和10，以构成表面发射型半导体激光器件。此时，在形成第二阻挡层10之后，围绕有源区5提供具有第二阻挡层的相同导电类型的第三阻挡层1通过这种设置，在第二阻挡层10中引入凹坑缺陷和薄壁部分。第二阻挡层10由第三阻挡层11恢复。因此，可以防止由于PN反向偏压导致的电流阻挡效应恶化。
主权项	-
申请日期	1990-03-29
专利号	JP1991283481A
专利状态	失效
申请号	JP1990083647
公开（公告）号	JP1991283481A
IPC 分类号	H01S5/00 \| H01S5/183 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65850
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	ISHIKAWA TORU,IBARAKI AKIRA,FURUSAWA KOTARO. Manufacture of surface-emitting type semiconductor laser device. JP1991283481A[P]. 1991-12-13.

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