Strain quantum well semiconductor laser

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	Strain quantum well semiconductor laser
其他题名	Strain quantum well semiconductor laser
	YAMADA HIROHITO
	1992-02-19
专利权人	日本電気株式会社
公开日期	1992-02-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To eliminate the overflow of electrons, to execute a uniform carrier injection operation and to obtain a strain quantum well laser whose gain spectrum is sharp and whose threshold value is low by a method wherein the lattice constant of a semiconductor forming a well layer is made larger than the lattice constant of a substrate. CONSTITUTION:A strain quantum well semiconductor laser where a semiconductor forming a well layer is composed of InXGa1-XAsYP1-Y or InAsZP1-Z and its lattice constant is larger than the lattice constant of a substrate is formed. X, Y and Z are set as 0<=X,Y, and Z<= Its manufacturing method is as follows: an n-InP buffer layer 14 is grown in 0.1mum on an n-InP substrate 15 by an MOVPE method; then, an InGaAsP barrier 12 is grown in 3mum; and an In0.8 Ga0.2As0.6P0.4 well 13 is grown in 40Angstrom on it. The growth operation of the well and the barrier is repeated five times; and a five-layer multiple quantum well structure is manufactured. In addition, a p-InP clad layer 11 is grown in about 11mum on it. A strain quantum well wafer manufactured in this manner is buried in a DC-PBH structure. Lastly, a p-side electrode and an n-side electrode are vapor-deposited.
其他摘要	目的：消除电子溢出，执行均匀载流子注入操作，并通过一种方法获得应变量子阱激光器，其增益谱锐利且阈值低，其中形成阱层的半导体的晶格常数为使得大于衬底的晶格常数。组成：一种应变量子阱半导体激光器，其中形成阱层的半导体由InXGa1-XAsYP1-Y或InAsZP1-Z组成，并且其晶格常数大于衬底的晶格常数。 X，Y和Z设定为0 <= X，Y和Z <= 1。其制造方法如下：通过MOVPE法在n-InP衬底15上生长0.1μm的n-InP缓冲层14;然后，InGaAsP势垒12生长在3μm;在其上以40埃的速度生长In0.8 Ga0.2As0.6P0.4阱13。井和屏障的生长操作重复五次;并且制造了五层多量子阱结构。另外，在其上生长约11μm的p-InP包层11。以这种方式制造的应变量子阱晶片被掩埋在DC-PBH结构中。最后，气相沉积p侧电极和n侧电极。
主权项	-
申请日期	1990-06-19
专利号	JP1992049689A
专利状态	失效
申请号	JP1990160108
公开（公告）号	JP1992049689A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65847
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	YAMADA HIROHITO. Strain quantum well semiconductor laser. JP1992049689A[P]. 1992-02-19.

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