帶光檢測器的表面發射型半導体激光器，其制造方法以及用其制成的傳感器

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	帶光檢測器的表面發射型半導体激光器，其制造方法以及用其制成的傳感器
其他题名	帶光檢測器的表面發射型半導体激光器，其制造方法以及用其制成的傳感器
	KATSUMI MORI; TAKAYUKI KONDO; TAKEO KANEKO
	2000-03-17
专利权人	精工愛普生株式會社
公开日期	2000-03-17
授权国家	中国香港
专利类型	发明申请
摘要	A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 µm, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 µm after etching . The device can be used in a pressure sensor or in a position or displacement sensor.
其他摘要	一种具有光学检测器的表面发射型半导体激光器，其能够令人满意地确保光电发射器的激光发射特性和光电转换效率。激光器包括第一导电半导体层和形成在半导体衬底的第一和第二区域上的第二导电半导体层。在第一区域上的第二导电半导体层上形成光学谐振器，其发射垂直于半导体衬底的平面的光。在第二区域上，由第一和第二导电半导体层形成至少一个光电二极管。在第一区域上，第二导电半导体层形成为具有至少1μm的厚度，并且用作用于向光学谐振器提供电流的下电极。在第二区域上，形成至少一个光电二极管的第二导电半导体层在蚀刻后形成为具有小于1μm的厚度。该装置可用于压力传感器或位置或位移传感器。
主权项	A surface emission type semiconductor laser having an optical detector, comprising: a semiconductor substrate having first and second regions formed therein; a first conducting semiconductor layer formed on each of said first and second regions; a second conducting semiconductor layer formed on each of said first and second regions of said first conducting semiconductor layer; and an optical resonator formed on said second conducting semiconductor layer on said first region, and said optical resonator emitting light in a direction perpendicular to said semiconductor substrate; wherein said second conducting semiconductor layer on said first region has a thickness of at least 1 µm, and is used as a lower electrode for supplying a current to said optical resonator; and said first and second conducting semiconductor layers form at least one photodiode on said second region, and said second conducting semiconductor layer forming said at least one photodiode has a thickness of less than 1 µm.
申请日期	1998-04-30
专利号	HK1004502A
专利状态	失效
申请号	HK98103702
公开（公告）号	HK1004502A
IPC 分类号	H01L \| G11B7/12 \| G01L9/00 \| G11B7/125 \| G11B7/095 \| H01S5/026 \| G01D5/26 \| H01S \| H01S5/183 \| H01L31/10 \| H01L27/15 \| H01L31/12 \| H01S5/00 \| G02B \| G01D \| G11B
专利代理人	-
代理机构	中國專利代理(香港)有限公司
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65382
专题	半导体激光器专利数据库
作者单位	精工愛普生株式會社
推荐引用方式 GB/T 7714	KATSUMI MORI,TAKAYUKI KONDO,TAKEO KANEKO. 帶光檢測器的表面發射型半導体激光器，其制造方法以及用其制成的傳感器. HK1004502A[P]. 2000-03-17.