Blue vertical cavity surface emitting laser

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	Blue vertical cavity surface emitting laser
其他题名	Blue vertical cavity surface emitting laser
	FLOYD, PHILIP D.; HOFSTETTER, DANIEL
	2000-07-05
专利权人	XEROX CORPORATION
公开日期	2000-07-05
授权国家	欧洲专利局
专利类型	发明申请
摘要	An independently addressable, vertical cavity surface emitting laser ("VCSEL") emitting light in the blue wavelength range of 390 to 430 nanometers comprises a gallium nitride-based laser structure grown by selective area epitaxy and lateral mask overgrowth. By appropriate patterning of a dielectric mask on the gallium nitride layer (204) on a sapphire substrate (202), areas in a second gallium nitride layer (210) can have a low defect density upon which the remainder of the laser structure (218-230) can be formed.
其他摘要	发射蓝色波长范围为390至430纳米的光的可独立寻址的垂直腔表面发射激光器（“VCSEL”）包括通过选择性区域外延和横向掩模过度生长而生长的基于氮化镓的激光器结构。通过在蓝宝石衬底（202）上的氮化镓层（204）上适当地图案化电介质掩模，第二氮化镓层（210）中的区域可以具有低缺陷密度，在该缺陷密度上激光器结构的其余部分（218- 230）可以形成。
主权项	A surface emitting laser (200) for emitting coherent light in wavelength range of 390 to 430 nanometers comprising: a sapphire substrate (202); a first gallium nitride semiconductor layer (204) formed on said sapphire substrate (202); a first reflector (206) of dielectric materials formed on said first gallium nitride semiconductor layer (204), said first reflector (206) having a stripe (208) exposing a portion of the surface of said first gallium nitride semiconductor layer, a second gallium nitride semiconductor layer (210) formed on said first reflector (206) and said stripe; a plurality of semiconductor layers (218,220,222,224,226,228,230) formed on a section of said second gallium nitride semiconductor layer (210) formed on said first reflector (206) ; one or more of said plurality of semiconductor layers forming an active region (222); a second reflector (234) of dielectric materials formed on said plurality of semiconductor layers, at least one of said first or second reflectors (206,234) allowing a partial transmission of light emitted by said active region; and first and second electrodes (232,240) which enable biasing of said active region to emit coherent light in wavelength range of 390 to 430 nanometers.
申请日期	1999-04-28
专利号	EP0955708A3
专利状态	失效
申请号	EP1999303311
公开（公告）号	EP0955708A3
IPC 分类号	H01L33/00 \| H01S5/00 \| H01S5/02 \| H01S5/183 \| H01S5/22 \| H01S5/323 \| H01S5/343 \| H01S3/085 \| H01S3/19
专利代理人	-
代理机构	RACKHAM, STEPHEN NEIL
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65200
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	FLOYD, PHILIP D.,HOFSTETTER, DANIEL. Blue vertical cavity surface emitting laser. EP0955708A3[P]. 2000-07-05.

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